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  g.813 Datasheet PDF File

For g.813 Found Datasheets File :: 1257    Search Time::1.859ms    
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    MPX5050 MPX5050D MPX5050DP MPX5050GP MPX5050GS MPX5050GSX MPX5050GVP MPX5050GVS MPX5050GVSX

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MPX5050 MPX5050D MPX5050DP MPX5050GP MPX5050GS MPX5050GSX MPX5050GVP MPX5050GVS MPX5050GVSX
OCR Text ....92 11.43 2.29 2.66 L -T- G F D 6 PL 0.136 (0.005) M J S TA M DIM A B C D F G J L M N R S CASE 867-08 ISSUE N BASIC ELEMENT (D) STYLE 1: PIN 1. 2. 3. 4. 5. 6. VOUT GROUND VCC V1 V2 VEX C A NOTES: 1. DIMEN...
Description OPERATING OVERVIEW INTEGRATED PRESSURE SENSOR 0 to 50 kPa (0 to 7.25 psi) 0.2 to 4.7 Volts Output

File Size 186.91K  /  10 Page

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    IDT82V3012 IDT82V3012PV IDT82V3012PV8

IDT[Integrated Device Technology]
Part No. IDT82V3012 IDT82V3012PV IDT82V3012PV8
OCR Text ...DS1 interfaces * Supports ITU-T g.813 Option 1 clocks * Supports ITU-T G.812 Type IV clocks * Supports ETSI ETS 300 011, TBR 4, TBR 12 and TBR 13 timing for E1 interface * Selectable reference inputs: 8 kHz, 1.544 MHz, 2.048 MHz or 19.44 MH...
Description T1/E1/OC3(19.44M) WAN PLL, Dual Input Reference. Stratum 3/4/4E
T1/E1/OC3 WAN PLL WITH DUAL REFERENCE INPUTS

File Size 364.91K  /  30 Page

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    U690B

TEMIC[TEMIC Semiconductors]
Part No. U690B
OCR Text ...plied to signal input, Pin 3, e.g. from Hall generator via terminal V. It is compared in the integrated circuit with a reference frequency created by the oscillator. The oscillator frequency, f, is generated with external resistor, R2kR7, a...
Description Rear Wiper Interval/Wipe-Wash Control

File Size 100.75K  /  9 Page

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    D1028UK D1028

Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. D1028UK D1028
OCR Text G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W - 28V - 175MHz PUSH-PULL FEATURES...813 0.832 0.851 0.861 0.871 0.884 0.892 0.901 0.909 0.913 0.923 0.926 0.934 0.936 0.939 0.945 0.948 ...
Description Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET

File Size 125.76K  /  7 Page

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    PTF10021

Ericsson Microelectronics
Part No. PTF10021
OCR Text ... Z Source Z Load Z0 = 10 W G S Frequency GHz 1.30 1.40 1.45 1.50 1.55 1.60 1.70 R Z Source W jX -8.77 -9.30 -10.52 -10.60 -7.30...813 0.839 0.893 0.929 0.943 0.981 1.000 0.947 0.915 0.883 0.874 0.846 0.632 0.259 0.472 0.817 0.853 ...
Description 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor

File Size 277.83K  /  6 Page

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    PTF10137

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10137
OCR Text ... V, IDQ = 160 mA, P-1dB = 18 W G S RD G E NE S TOW A - WAVELENG TH Frequency MHz 840 860 880 900 920 940 960 980 1000 Z Sou...813 0.834 0.849 0.865 0.874 0.884 0.896 0.902 0.912 0.917 0.921 0.929 0.932 0.937 0.943 0.943 0.950 ...
Description 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor

File Size 174.57K  /  6 Page

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    UPC8126K UPC8126K-E1 UPC8158K UPC8101GR UPC8104GR UPC8105GR UPC8110GR UPC8125GR UPC8126GR UPC8129GR UPC8139GR-7JH

NEC[NEC]
Part No. UPC8126K UPC8126K-E1 UPC8158K UPC8101GR UPC8104GR UPC8105GR UPC8110GR UPC8125GR UPC8126GR UPC8129GR UPC8139GR-7JH
OCR Text ...0 28-pin QFN PDC800 M/1.5 G Remark For outline of the quadrature modulator series, please refer to the application note Usage of PC...813 MHz, PRFin = -11 dBm fMODout = 948 MHz + fI/Q fI/Qin = 2.625 kHz VI/Qin = 500 mVP-P (Single ende...
Description 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

File Size 187.44K  /  20 Page

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    AD595A AD595AD AD595AQ AD595C AD595CD AD595CQ AD594CQ AD594AQ AD595 AD594CD AD594A AD594 AD594AD AD594C AD595CDZ

AD[Analog Devices]
Analog Devices, Inc.
Part No. AD595A AD595AD AD595AQ AD595C AD595CD AD595CQ AD594CQ AD594AQ AD595 AD594CD AD594A AD594 AD594AD AD594C AD595CDZ
OCR Text ... DETECT AD594/AD595 +A G G +TC ICE POINT COMP. -TC 1 +IN 2 +C 3 +T 4 COM 5 -T 6 -C 7 V- PRODUCT DESCR...813 1022 1233 1445 1659 1873 2087 2302 2517 2732 2946 3160 3374 3588 3801 4015 4228 4441 4655 4869 5...
Description Monolithic Thermocouple Amplifier with Cold Junction Compensation Pretrimmed for Type K Thermocouples
Monolithic Thermocouple Amplifier with Cold Junction Compensation Pretrimmed for Type J Thermocouples
Monolithic Thermocouple Amplifiers with Cold Junction Compensation 单片放大器热电偶冷端补偿

File Size 136.49K  /  8 Page

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    IRF630N IRF630NL IRF630NS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF630N IRF630NL IRF630NS
OCR Text ... VDSS = 200V RDS(on) = 0.30 G S Fifth Generation HEXFET (R) Power MOSFETs from International Rectifier utilize advanced processing te...813 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Therm...
Description Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)
Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)

File Size 152.79K  /  11 Page

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