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    MMSF4P01HD ON2266

Motorola, Inc
Part No. MMSF4P01HD ON2266
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description From old datasheet system
SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS

File Size 296.63K  /  10 Page

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    ON Semi
Part No. MMSF1308_D ON2250
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description Low Power Surface Mount Products
From old datasheet system

File Size 173.78K  /  10 Page

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    ON Semi
Part No. MTB60N10E7T4 MTB60N10E7
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description TMOS POWER FET 60 AMPERES 100 VOLTS

File Size 185.65K  /  8 Page

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    NTMS7N03R2

ONSEMI[ON Semiconductor]
Part No. NTMS7N03R2
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description Power MOSFET 7 Amps, 30 Volts

File Size 97.78K  /  12 Page

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    MCP2515-I/ML RXF3EID0 RXF3EID8 RXF3SIDH RXF3SIDL RXF0SIDH RXF0EID8 RXF0EID0 RXF0SIDL RXF1EID0 RXF1EID8 RXF1SIDH RXF1SIDL

Microchip Technology
Part No. MCP2515-I/ML RXF3EID0 RXF3EID8 RXF3SIDH RXF3SIDL RXF0SIDH RXF0EID8 RXF0EID0 RXF0SIDL RXF1EID0 RXF1EID8 RXF1SIDH RXF1SIDL RXF2EID0 RXF2EID8 RXF2SIDH RXF2SIDL RXF4EID0 RXF4EID8 RXF4SIDH RXF4SIDL RXF5EID0 RXF5EID8 RXF5SIDH RXF5SIDL MCP2515-E/ML RXM0SIDH TXB0SIDH TXB1SIDH MCP2515T-I/M TXB2CTRL RXB0CTRL RXB0D5 RXB0D6 RXB0D7 RXB0SIDH RXB0EID0 RXB0EID8
OCR Text ... protocol rec tec errpas busoff finite state machine counter counter shift<14:0> {transmit<5:0>, receive<8:0>} transmit logic bit timing logic tx rx configuration registers clock generator protocol engine buffers txreq txb1 abtf mloa txerr ...
Description Stand-Alone CAN Controller with SPI Interface

File Size 837.29K  /  92 Page

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    ON Semi
Part No. MTP60N10E7 ON2634
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description TMOS POWER FET 60 AMPERES 100 VOLTS
From old datasheet system

File Size 182.60K  /  8 Page

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    ON Semi
Part No. MTDF2N06HD_D ON2527
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description DUAL TMOSPOWER MOSFET 1.5 AMPERES 60 VOLTS
From old datasheet system

File Size 183.63K  /  10 Page

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    ON Semi
Part No. MTD1312_D ON2465
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description SINGLE TMOS POWER MOSFET 30 VOLTS
From old datasheet system

File Size 182.91K  /  10 Page

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    ON Semi
Part No. MTP71040L_D ON2639
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description TMOS POWER FET 60 AMPERES 100 VOLTS
From old datasheet system

File Size 169.32K  /  8 Page

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    NT4N03

ON Semiconductor
Part No. NT4N03
OCR Text ...tics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching...
Description Power MOSFET 4 Amps, 30 Volts

File Size 72.27K  /  8 Page

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