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  fet2-10 Datasheet PDF File

For fet2-10 Found Datasheets File :: 187    Search Time::1.734ms    
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    UP04878

Panasonic Semiconductor
Part No. UP04878
OCR Text ... c 1: source (fet1) 4: source (fet2) 2: gate (fet1) 5: gate (fet2) 3: drain (fet2) 6: drain (fet1) ssmini6-f1 package 3 4 12 6 5 note) meas...10 0.02 654 123 5? 5? 0.20 +0.05 ?.02 1.60 0.05 0.55 0.05 0.10 max. 0 to 0.02 (0.20) 1.60 0.05 d...
Description Silicon N-channel MOSFET

File Size 77.81K  /  3 Page

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    Panasonic
Part No. XN06776
OCR Text ... 3 c 1: drain (fet1) 4: gate (fet2) 2: gate (fet1) 5: source (fet2) 3: drain (fet2) 6: source (fet1) eiaj: sc-74 mini6-g1 package 6 fet2 f...10 20 30 v ds = ? 5 v t a = 25 c drain current i d (ma) gate-source voltage v gs (v) 0...
Description Composite Device - Composite Transistors

File Size 74.20K  /  3 Page

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    FG654301

Panasonic Semiconductor
Part No. FG654301
OCR Text ...ET1) Silicon P-channel MOS FET (FET2) For switching circuits Overview FG654301 is N-P channel dual type small signal MOS FET employed sma...10 mA VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA VDS = 3 V, VGS = 0, f = 1 MHz Conditions ID = 1 mA, VG...
Description Silicon N-channel MOS FET

File Size 707.54K  /  7 Page

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    UPA2354 UPA2354T1G-E4-A

Renesas Electronics Corporation
Part No. UPA2354 UPA2354T1G-E4-A
OCR Text ... the Drains of the FET1 and the FET2 are internally connected. 1.8 V drive available and low on-state resistance RSS(on)1 = 42.0 m MAX. (VGS...10.0 V, IS = 1.0 mA, TEST CIRCUIT 3 VSS = 10.0 V, IS = 2.0 A, TEST CIRCUIT 4 VGS = 4.5 V, IS = 2.0 A...
Description MOS FIELD EFFECT TRANSISTOR

File Size 363.82K  /  9 Page

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    UPA2353 UPA2353T1G-E4-A

Renesas Electronics Corporation
Part No. UPA2353 UPA2353T1G-E4-A
OCR Text ... the Drains of the FET1 and the FET2 are internally connected. 1.8 V drive available and low on-state resistance RSS(on)1 = 31 m MAX. (VGS =...10 V, IS = 1.0 mA, TEST CIRCUIT 3 VSS = 10 V, IS = 3.0 A, TEST CIRCUIT 4 VGS = 4.5 V, IS = 3.0 A, TE...
Description MOS FIELD EFFECT TRANSISTOR

File Size 369.25K  /  9 Page

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    UPA2350T1P UPA2350T1P-E4-A

Renesas Electronics Corporation
Part No. UPA2350T1P UPA2350T1P-E4-A
OCR Text ... EQUIVALENT CIRCUIT FET1 Gate1 FET2 Gate2 Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Source to Source Voltage (VGS = 0 V...10 V, IS = 1.0 mA, TEST CIRCUIT 3 VSS = 10 V, IS = 3.0 A, TEST CIRCUIT 4 VGS = 4.5 V, IS = 3.0 A, TE...
Description MOS FIELD EFFECT TRANSISTOR

File Size 391.37K  /  11 Page

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    TPCL4203

Toshiba Semiconductor
Part No. TPCL4203
OCR Text ...ual voltage applied to fet1 and fet2. fig. fig. fig. fig. 5.1 5.1 5.1 5.1 device mounted on a glass-epoxy board (a) device mounted on a ...10 ma, v gs = 0 v i s = 10 ma, v gs = -12 v v ss = 10 v, i s = 200 a v gs = 2.5 v, i s = 3 ...
Description Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications

File Size 376.36K  /  12 Page

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    FC6943010R

Panasonic Semiconductor
Part No. FC6943010R
OCR Text ...urce(fet1) 4. pin name 3. drain(fet2) 6. drain(fet1) panasonic ssmini6-f3-b gate(fet2) drain(fet1) drain(fet2) 6. sc-107c source(fet2) 1. so...10 ma pf output capacitance pf turn-on time *1 ton vdd = 3 v, vgs = 0 to 3 v 100 ns ? electrical ...
Description Dual N-channel MOS FET

File Size 362.01K  /  7 Page

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    BUK9MPP-55PRR

NXP Semiconductors N.V.
Part No. BUK9MPP-55PRR
OCR Text ...tatic characteristics, FET1 and FET2 ID/Isense 5130 55 5700 - 6270 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S...
Description Dual TrenchPLUS logic level FET 9160 mA, 55 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-013AC

File Size 243.57K  /  15 Page

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