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Panasonic
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| Part No. |
2SK2339
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| OCR Text |
...rature symbol v dss v gss i d i dp eas * p d t ch t stg rating 8010 15 10 20 62.5 30 1.3 150 C55 to +150 unit v v a a mj w ?c ?c n electri...10a, v gs = 0 l=230 h, v dd = 30v, v gs = 0 i dr =10a, di/dt= 80a/ s v ds =10v, v gs = 0, f= 1mhz v ... |
| Description |
Power Device - Power MOS FETs
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| File Size |
60.38K /
4 Page |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX1808 MAX1807 MAX1807EUB MAX1808EUB
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| OCR Text |
...or with hysteresis to drive the DP output high, turning off the external P-channel switch when the input voltage is too low. The MAX1807/MAX...10A VDD = 8.5V to 28V VDD = 4.4V 7.5 3.4 CONDITIONS VDP = VDD - 0.4V VDP = VDD - 2V MIN 1 5 4 TYP 50... |
| Description |
Micropower Adjustable Overvoltage Protection Controllers
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| File Size |
225.92K /
10 Page |
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it Online |
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Anpec Electronics Corporation
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| Part No. |
APM3011NUC-TRL APM3011NUC-TUL
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| OCR Text |
...ge heat sink t c =25 c 100 i dp 300 s pulse drain current tested t c =100 c 65 a t c =25 c 40 i d continuous drain current t ...10a 13 17 m ? diode characteristics v sd a diode forward voltage i sd =10a , v gs =0v 0.9 1... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
129.27K /
11 Page |
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it Online |
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Winbond Electronics
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| Part No. |
W91550DN
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| OCR Text |
... 41 ats 57 hfi 10 3b 26 s/ m 42 dp 58 hfo 11 3c 27 8c 43 mode 59 v lcd 12 4a 28 9a 44 c1 60 cp 13 4b 29 9b 45 c2 61 cn 14 4c 30 9c 46 c3 62 com1 15 5a 31 10a 47 c4 63 com2 16 5b 32 10b 48 c5 64 lock
w91550dn series publication release dat... |
| Description |
13-MEMORY TONE/PULSE DIALER WITH LCD AND LOCK FUNCTIONS
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| File Size |
233.28K /
32 Page |
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it Online |
Download Datasheet |
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TY Semicondutor
TY Semiconductor Co., Ltd
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| Part No. |
KDB2670 FDB2670 KDB2670FDB2670
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| OCR Text |
...i d 19 a drain current-pulsed i dp 40 a power dissipation 93 w derate above 25 0.63 w/ peak diode recovery dv/dt d v /d t 3.2 v/ns thermal r...10a 98 130 v gs =10v,i d =10a,t j =125 205 285 on?state drain current i d(on) v gs =10v,v ds =10v 20... |
| Description |
N-Channel PowerTrench MOSFET
19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge
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| File Size |
261.48K /
2 Page |
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it Online |
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Fairchild Semiconductor
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| Part No. |
ISL9N2357D3ST
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| OCR Text |
...lectrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl = 1.01e-12, rs = 3.5e-3, ikf=15, trs1 = 1.01e-3, trs2 = 1.21e-6, cjo = 6.8e-10, tt = 6.7e-9, m = 0.35) dp..model dbreakmod = (rs = 0.068, trs1 = 1.12e-3, trs2 = 1.25e-6) dp..model dp... |
| Description |
30V, 0.007 OHM, 35A, N-CHANNEL ULTRAFET TRENCH POWER MOSFET
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| File Size |
211.85K /
9 Page |
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it Online |
Download Datasheet |
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