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  di dt100a Datasheet PDF File

For di dt100a Found Datasheets File :: 23    Search Time::0.937ms    
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    ETC[ETC]
Part No. SW634
OCR Text ...0ohm, Starting TJ=25 3. ISD8.5A,di/dt100a/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. 2/6 REV0.1 04.10.1 SAMWIN 10 1 VGS top: 15V 10V 9V 8V 7V ...
Description N-Channel MOSFET

File Size 680.14K  /  6 Page

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    SW730

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SW730
OCR Text ...G=0ohm, Starting TJ=25 3. ISD6A,di/dt100a/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. 2/6 REV0.1 04.10.1 SAMWIN VGS SW730 10 1 top: 1...
Description N-Channel MOSFET

File Size 684.39K  /  6 Page

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    IPW60R099CP IPW60R099CP08

Infineon Technologies AG
Part No. IPW60R099CP IPW60R099CP08
OCR Text ...V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes a...dt100a/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch C o(er) is...
Description Cool MOS Power Transistor Feature new revolutionary high voltage technology

File Size 575.66K  /  11 Page

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    SW830

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SW830
OCR Text ...G=0ohm, Starting TJ=25 3. ISD5A,di/dt100a/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. 2/6 REV0.1 04.10.1 SAMWIN VGS SW830 10 1 ID ,Dr...
Description N-Channel MOSFET

File Size 674.64K  /  6 Page

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    UF450-T47-T

Unisonic Technologies
Part No. UF450-T47-T
OCR Text ...ISM 48 Forward Current IF=12 A, di/dt100a/s, Reverse Recovery Time tRR 1600 TJ =25 ,VDD50V (Note3) Reverse Recovery Charge QRR 14 Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. VDD = 50V, starting TJ = 25 , Peak IL = 12A, ISD 1...
Description 12 Amps, 500 Volts N-CHANNEL POWER MOSFET

File Size 220.23K  /  6 Page

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    MTN10N60FP

Cystech Electonics Corp.
Part No. MTN10N60FP
OCR Text ...unction temperature. 3. ISD10A, di/dt100a/s, VDDBVDSS, TJ=+150. VDS VGS ID ID IDM EAS EAR dv/dt TL TPKG Pd Tj, Tstg 600 30 10* 6 40* 237 5 3.0 300 260 50 0.4 -55~+150 V V A A A mJ V/ns C C W W/C C Thermal Data Parameter Thermal...
Description N-Channel Enhancement Mode Power MOSFET

File Size 644.87K  /  9 Page

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    MTN10N65FP

Cystech Electonics Corp.
Part No. MTN10N65FP
OCR Text ...unction temperature. 3. ISD10A, di/dt100a/s, VDDBVDSS, TJ=+150. VDS VGS ID ID IDM EAS EAR dv/dt TL TPKG Pd Tj, Tstg 650 30 10* 6 40* 237 5 3.0 300 260 50 0.4 -55~+150 V V A A A mJ V/ns C C W W/C C Thermal Data Parameter Thermal...
Description N-Channel Enhancement Mode Power MOSFET

File Size 644.78K  /  9 Page

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    MTN2N60I3

Cystech Electonics Corp.
Part No. MTN2N60I3
OCR Text ...=25, starting TJ=+25. 3. ISD2A, di/dt100a/s, VDDBVDSS, starting TJ=+25. VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg 600 30 1.9 1.14 7.6 60 1.9 4.4 4.5 300 1.5 44 0.35 -55~+150 V V A A A mJ A mJ V/ns C W W W/C C Thermal Da...
Description N-Channel Enhancement Mode Power MOSFET

File Size 303.63K  /  9 Page

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    MTN1N65I3

Cystech Electonics Corp.
Part No. MTN1N65I3
OCR Text ...5, starting TJ=+25. 3. ISD1.0A, di/dt100a/s, VDDBVDSS, starting TJ=+25. VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg 650 30 1.0 0.6 4.0 43 1.0 2.8 4.5 300 1.5 28 0.2 -55~+150 V V A A A mJ A mJ V/ns C W W W/C C Thermal Data...
Description N-Channel Enhancement Mode Power MOSFET

File Size 238.76K  /  8 Page

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    IPW60R075CP

Infineon Technologies AG
Part No. IPW60R075CP
OCR Text ...V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes a...dt100a/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch C o(er) is...
Description
File Size 531.56K  /  11 Page

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For di dt100a Found Datasheets File :: 23    Search Time::0.937ms    
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