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25124 54371 MSM6650 040010 01456 CUSO3290 MA153 BC847B
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  db-25 Datasheet PDF File

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    2SB642

PANASONIC[Panasonic Semiconductor]
Part No. 2SB642
OCR Text ...E 5 5 Noise figure NF (dB) Noise figure NF (dB) 4 4 14 12 10 8 6 4 2 10kHz f=100Hz 1kHz 3 3 2 2 1 1 0 0 -5 -10 -15 -20 -25 -30 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.3 1 3 ...
Description Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

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    2SB709A 2SD601A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB709A 2SD601A
OCR Text ... -- IE 5 Noise figure NF (dB) Noise figure NF (dB) h Parameter 4 14 12 10 8 6 4 2 10kHz hie (k) VCE=-5V f=270Hz Ta=25C 3 10 f=100Hz 1kHz 30 hoe (S) 3 10 2 1 3 0 0.01 0.03 0.1 0.3 1 3 10 ...
Description Silicon PNP epitaxial planer type

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    2SC2732

HITACHI[Hitachi Semiconductor]
Part No. 2SC2732
OCR Text ...-- -- 0.5 5 -- -- 0.8 -- MHz pF dB Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IC = 0 I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 3 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz V...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

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    2SC3931

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3931
OCR Text ...2 650 0.8 24 3.3 1 260 V MHz pF dB dB typ max Unit V V *h FE Rank classification Rank hFE Marking Symbol C 65 ~ 160 UC D 100 ~ 260...25 25C 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 360 hFE -- IC VCE=6V F...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)

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    2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662

ROHM[Rohm]
Part No. 2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662
OCR Text ... VCE/IC = 10V/5mA GHz pF ps dB VCE = 10V , IE = 10mA , f = 500MHz VCB = 10V , IE = 0A , f = 1MHz VCB = 10V , IC = 10mA , f = 31.8MHz VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50 2/2
Description High-Frequency Amplifier Transistor(11V 50mA 3.2GHz)
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ...YP. MAX. 0.1 0.1 0.5 120 GHz pF dB UNIT TEST CONDITION VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA VCE = 5 V, IC = 5 mA VCE = 5...25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 PT - Total Power Dissipation - mW Free Ai...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5005 2SC5005-T1 2SC5005NE58119

NEC Corp.
NEC[NEC]
Part No. 2SC5005 2SC5005-T1 2SC5005NE58119
OCR Text ...YP. MAX. 0.1 0.1 0.5 120 GHz pF dB UNIT TEST CONDITION VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA A A V VCE = 5 V, IC =...25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 200 Free Air VCE = 5 V 100 DC CURRENT GAI...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

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    2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2
OCR Text ...= 3 V, IE = 0, f = 1 MHz) : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 1.6 0.1 0.8 0.1 PACKAGE DIMENSIONS in millimeters * ...25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curr...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

File Size 60.49K  /  10 Page

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    2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2

http://
NEC[NEC]
NEC Corp.
Part No. 2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text ...= 3 V, IE = 0, f = 1 MHz) : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 0.5 1.6 0.1 1.0 0.2+0.1 -0 0.3 +0.1 -0 0.15 +0.1 -0.05 ...25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curr...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

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    2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2
OCR Text ... 5 mA, f = 2 GHz) * Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) * High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) ...25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curr...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

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