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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HVF1-101 RD06HVF1
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| OCR Text |
...dq=0.3A Zg=ZI=50 ohm
Vgs-Ids charactoristics 2 4 5 4 Vds=10V Tc=-25~+75C -25C Ids(A),GM(S) 3 2 1 Idd(A) +75C +25C
Po
3
2
1
2
4 6 Vgs(V)
8
10
Vgs-gm charactoristics 2.0 Vds=10V Tc=-25~+75C 1.5
gm(S)
1.0
... |
| Description |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
| File Size |
374.92K /
8 Page |
 View
it Online |
Download Datasheet
|
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MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
RD05MMP1
|
| OCR Text |
...1.0A Zg=ZI=50 ohm Po
Vgs-Ids charactoristics 2 5 8 Vds=10V Tc=-25~+75C 6 Ids(A),gm(S) -25C
+25C
+75C
8 6
4 3
Po(W)
Idd(A)
4
4 2
Idd
2 1
2
0 4 6 8 Vdd(V) 10 12
0
0 0 1 2 Vgs(V) 3 4 5
RD05MMP1
... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
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| File Size |
124.65K /
7 Page |
View
it Online |
Download Datasheet |
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|
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MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
RD02MUS2
|
| OCR Text |
...ICAL CHARACTERISTICS
Vgs-Ids charactoristics 2 4
Vds=10V Tc=-25~+75C -25C +25C
3 Ids(A),GM(S)
2
+75C
1
0 2 3 4 Vgs(V) 5 6
RD02MUS2
MITSUBISHI ELECTRIC 5/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATI... |
| Description |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
|
| File Size |
239.62K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
RD02MUS1 RD02MUS1-15
|
| OCR Text |
...YPICAL CHARACTERISTICS
Vgs-Ids charactoristics 2 4 Vds=10V Tc=-25~+75C 3 Ids(A),GM(S) -25C +25C
2
+75C
1
0 2 3 4 Vgs(V) 5 6
RD02MUS1
MITSUBISHI ELECTRIC 5/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SEN... |
| Description |
Silicon MOSFET Power Transistor 175MHz,520MHz,2W
|
| File Size |
237.02K /
9 Page |
View
it Online |
Download Datasheet |
|
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