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					NEC
Part No.	3SK223
OCR Text	...fs\| 15 19.5 nA nA mS Ciss cdss Crss 2.5 0.9 3.0 1.2 0.015 3.5 1.5 0.03 pF pF pF GPS NF1 NF2 17.0 20.0 2.2 0.9 3.2 2.4 dB dB dB VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 470 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA ...
Description	RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
File Size	55.90K / 6 Page	View it Online	Download Datasheet

					NEC
Part No.	3SK224
OCR Text	...\|yfs\| 18 22 nA nA mS Ciss cdss Crss 1.2 0.5 1.7 0.9 0.015 2.2 1.2 0.025 pF pF pF IDSX Classification Class Marking IDSX (mA) U94/UID* U94 0.5 to 7.0 U95/UIE* U95 5.0 to 15.0 * Old Specification/New Specification ...
Description	RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
File Size	51.96K / 6 Page	View it Online	Download Datasheet

					INFINEON[Infineon Technologies AG]
Part No.	BF1009SR BF1009S
OCR Text	... 40 50 F 1.4 2.1 dB Gp 18 22 dB cdss 0.9 Cg1ss 2.1 2.7 pF Symbol min. (verified by random sampling) g fs 26 30 mS Forward transconductance Values typ. max. Unit 3 Feb-18-2004 BF1009S... Total power dissipation Ptot = (TS) BF1009S,...
Description	RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Silicon N-Channel MOSFET Tetrode
File Size	249.05K / 5 Page	View it Online	Download Datasheet

					SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62702-C2606
OCR Text	...nce (self biased) g fs Cg1ss cdss G ps F 800 Gps 26 18 40 30 2.1 0.9 22 1.4 50 2.7 - mS pF VDS = 9 V, V G2S = 6 V, f = 1 kHz Gate 1-input capacitance (self biased) VDS = 9 V, V G2S = 6 V, f = 1 MHz Output capacitance...
Description	NPN Silicon AF Transistors (For AF driver and output stages High collector current) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) From old datasheet system
File Size	50.66K / 4 Page	View it Online	Download Datasheet

					SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BF1009 Q62702-F1613
OCR Text	...nce (self biased) g fs Cg1ss cdss G ps F 800 Gps 40 24 2.1 0.9 22 1.4 50 2.5 - mS pF VDS = 9 V, V G2S = 6 V, f = 1 kHz Gate 1-input capacitance (self biased) VDS = 9 V, V G2S = 6 , f = 1 MHz Output capacitance (self ...
Description	Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network From old datasheet system Silicon N-Channel MOSFET Tetrode (For low noise high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
File Size	32.12K / 4 Page	View it Online	Download Datasheet

					SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BF987 Q62702-F35
OCR Text	... 2 mS, GL = 0.5 mS gfs Cgss Cdg cdss Gp 14 - - - - 16 2.7 35 1 25 - - - - - mS pF fF pF dB V(BR) DS Values typ. max. Unit 20 6.5 - 5 - - - - - - - 12 50 18 2.5 V V(BR) GSS IGSS nA mA V IDSS - VGS (p) F - ...
Description	SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) From old datasheet system Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
File Size	78.65K / 5 Page	View it Online	Download Datasheet

					INFINEON[Infineon Technologies AG]
Part No.	BF999
OCR Text	...10 mA, f = 200 MHz F 1 Gp 25 dB cdss 1 pF Cdg 25 fF Cgss 2.5 pF gfs 14 16 mS 2 Gate-source leakage current Gate-source breakdown voltage nA mA V IDSS - VGS (p) Nov-08-2002 BF999 Total power dissipati...
Description	RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB Silicon N-Channel MOSFET Triode
File Size	133.74K / 5 Page	View it Online	Download Datasheet

					Siemens Semiconductor G... Siemens Semiconductor Group Infineon SIEMENS AG
Part No.	CF739 Q62702-F1215
OCR Text	... VG2S = 2 V ... - 3 V gfs Cgfss cdss F - - Gps - - Gpsc Values typ. max. Unit V(BR)DS - IG1SS - IG2SS IDSS - VG1S(P) - VG2S(P) 10 - - 6 - - - - - - - - - 20 20 60 2.5 2.5 V A mA V - - - 25 0.95 0.5 - - - ...
Description	From old datasheet system GaAs FET (N-channel dual-gate GaAs MES FET)
File Size	138.44K / 7 Page	View it Online	Download Datasheet

					INFINEON[Infineon Technologies AG]
Part No.	BF543
OCR Text	... IDSS - VGS (p) gfs Cgss Cdg cdss Gp 9.5 - 12 2.7 18 0.9 22 - mS pF fF pF dB F - 1 - Jun-28-2001 BF543 Total power dissipation Ptot = f(TS) Output characteristics ID = f (VDS) 300 10 BF 543 ...
Description	RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB Silicon N-Channel MOSFET Triode
File Size	49.07K / 5 Page	View it Online	Download Datasheet

					INFINEON[Infineon Technologies AG]
Part No.	BF998 BF998W BF998R
OCR Text	...10 mA, VG2S = 4 V, f = 1 MHz cdss - 1.1 - pF Power gain VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gp dB 28 20 dB 2.8 1.8 50 - Noise figure VDS = 8 V, I D = 10...
Description	Silicon N-Channel MOSFET Tetrode
File Size	246.78K / 6 Page	View it Online	Download Datasheet

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