| |
|
 |
IXYS
|
| Part No. |
IXFN50N80Q2
|
| OCR Text |
...transient 40 v i d25 t c = 25 c50a i dm t c = 25 c, pulse width limited by t jm 200 a i ar t c = 25 c50a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ?... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
|
| File Size |
570.00K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XXS
|
| OCR Text |
...ntaneous meas. i fm =20a, di/dt=c50a/ m s, v r =150/300v* 1 , tj=25 c i fm =20a, di/dt=c50a/ m s, v r =150/300v* 1 , tj=150 c junction to case case to fin, conductive grease applied absolute maximum ratings (t j =25 c, unless otherwise... |
| Description |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
| File Size |
53.06K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Electronic Theatre Controls, Inc.
|
| Part No. |
FY4AEJ-03
|
| OCR Text |
...mbiet i s = 1.7a, d is /d t = c50a/ m s 1.5 23 40 8 550 220 115 12 20 40 40 0.75 100 0.1 0.1 2.0 30 55 1.10 78.1 C30 C1.5 v m a ma v m w m w s pf pf pf ns ns ns ns v c/w ns i d = 1ma, v gs = 0v v gs = 2... |
| Description |
FY4AEJ-03 FY4AEJ - 03
|
| File Size |
144.04K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
FY7BCH-02B
|
| OCR Text |
...mbiet i s = 1.5a, d is /d t = c50a/ m s 20 0.5 v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 0.1 0.1 1.3 21 30 0.147 1.10 78.1 drain-source breakdown voltage gate -source leakage current drain-source le... |
| Description |
Power MOSFETs: FY Series
|
| File Size |
69.62K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
