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Electronic Theatre Controls, Inc.
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| Part No. |
AN-937
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| OCR Text |
...ors are more easily driven than bipolars, a few basic considerations have to be kept in mind in order to avoid a loss in performance or outright device failure.
2. GATE VOLTAGE LIMITATIONS
Figure 2 shows the basic HEXFET(R)structure. Th... |
| Description |
Gate Drive Characteristics and Requirements for HEXFET
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| File Size |
365.72K /
21 Page |
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http://
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| Part No. |
IXDP630PI
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| OCR Text |
...r transistor, storage time (for bipolars) or tail time (for igbts), voltage rise and current fall times, etc., may be significant. problems caused by excessive deadtime if a little is good, a lot should be better - except with deadtime. un... |
| Description |
Inverter Interface and Digital Deadtime Generator for 3-Phase PWM Controls
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| File Size |
622.20K /
7 Page |
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it Online |
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Omron Electronics LLC Industrial Automation
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| Part No. |
VK05CFL13TR
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| OCR Text |
...es a good trade-off between the bipolars low on drop with high breakdown voltage in off state, and the mosfets high switching speed. the maximum theoretical working frequency is in the range of 300khz. circuit description the electrical sch... |
| Description |
BALLAST/BACKLIGHT CONTROLLER/DRIVER|BIPOLAR/MOS|SOP|8PIN|PLASTIC 镇流背光控制驱动器|双极/马鞍山|专科| 8引脚|塑料
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| File Size |
138.11K /
14 Page |
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it Online |
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