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SamHop Microelectronics
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| Part No. |
SP3900
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| OCR Text |
...23,2014 2 nc q gs nc q gd 1.2 1.7 gate-drain charge gate-source charge v ds =15v,i d =2.25a, v gs =10v drain-source diode characteristics and maximum ratings nc 3.2 v ds =15v,i d =2.25a,v gs =10v v ds =15v,i d =2.25,v gs =4.5v v sd diode fo... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.83K /
7 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics
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| Part No. |
SP3903
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| OCR Text |
7.5 31 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v ...ohm total gate charge rise time turn-off delay time v ds =15v,i d =3.75a,v gs =10v fall time turn-on... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
110.18K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STT622S
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| OCR Text |
...ate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
131.94K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STM301N
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| OCR Text |
... nc q gd 25 t d(on) 50 ns t r 4.7 ns t d(off) 11 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =50v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =50v,... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
189.64K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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