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5a 1200v Datasheet PDF File

For 5a 1200v Found Datasheets File :: 652 Search Time::1.079ms
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				INTERSIL[Intersil Corporation] Fairchild Semiconductor, Corp.
Part No.	HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text	...n Voltage VCE(SAT) IC = 5.5a, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emi...1200v IC = 5.5a, VCE = 0.5 BVCES IC = 5.5a, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On D...
Description	From old datasheet system 25a/ 1200v/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 25a, 1200v, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25a, 1200v,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247
File Size	86.05K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text	...n Voltage VCE(SAT) IC = 5.5a, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current S...1200v IC = 5.5a, VCE = 0.5 BVCES IC = 5.5a, VCE = 0.5 BVCES VGE = 15V VGE = 20V Gate to Emitter P...
Description	From old datasheet system 25a 1200v NPT Series N-Channel IGBT 25a, 1200v, NPT Series N-Channel IGBT 25a/ 1200v/ NPT Series N-Channel IGBT
File Size	79.50K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text	...ion Voltage VCE(SAT) IC = 5a, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emi...1200v IC = 5a, VCE = 0.5 BVCES IC = 5a, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay...
Description	From old datasheet system 21A 1200v NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200v, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200v,NPT系列N沟道绝缘栅双极型晶体 21A/ 1200v/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
File Size	88.17K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	HFA08TB120 HFB08TB120
OCR Text	... 3 ANODE 2 IRRM (typ.) = 4.5a trr (typ.) = 28ns di(rec) M /dt (typ.)* = 85a /s Benefits * Reduced RFI and EMI * Reduced Power Loss ...1200v) 6 HFA08TB120 Bulletin PD-2.383 rev. C 11/00 WORLD HEADQUARTERS: EUROPEAN HEADQUARTE...
Description	1200v 8A HEXFRED Discrete Diode in a TO-220AC package Ultrafast, Soft Recovery Diode Ultrafast/ Soft Recovery Diode
File Size	129.16K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	EFS2ACD EFS2BCD EFS2B-CD EFS2A-CD EFS21TL5 EFS EFS21-TL5 EFS2A EFS2B
OCR Text	...oelectronics. May 2000 - Ed: 5a 1/14 EFS PIN CONNECTION (top view) SO14 Pentawatt HV State tube detection Preheat select to b...1200v and starting aid). Therefore, the best way to strike a tube independently of the temperature i...
Description	STARLIGHT-KIT SR BTS PC 2 ASY C STARLIGHT-KIT 星光倪少
File Size	224.11K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	... 8.4 8.3 10 I C = 8.5a 8.2 8.1 8.0 7.9 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TC , Case Temperature (C) W Fig. 9 - Typical Switching Losses vs. Gat...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	6MBI10S-120
OCR Text	... 10 4 Ic= 20A 2 Ic= 10A Ic= 5a 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 5000 o D...
Description	IGBT MODULE(1200v/10A)
File Size	509.69K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CH20KB
OCR Text	...1 A Max. Test Conditions IC = 5.5a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =250A T J = 25C, VCE = 1200v TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Fro...
Description	IRG4CH20KB IGBT Die in Wafer Form
File Size	36.05K / 1 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM1000HA-24B
OCR Text	...RENT GAIN hFE Tj=25C IB=0.5a 200 VCE=4.0V Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	62.10K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM100DY-24 QM100DY-24K
OCR Text	...AIN hFE 160 IB=2A IB=1A IB=0.5a IB=0.1A 40 IB=0.2A 10 4 7 5 3 2 10 3 7 5 3 2 VCE=5.0V VCE=2.8V 120 80 0 Tj=25C 0 1 2 3 4 5 VCE (V) 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 ...
Description	100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	100.52K / 5 Page	View it Online	Download Datasheet

For 5a 1200v Found Datasheets File :: 652 Search Time::1.079ms
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