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OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
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| Part No. |
MSM7581
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| OCR Text |
...onsumption current : +2.7 V to +5.5 V, 2 mA/channel (max) * Package : 100-pin plastic TQFP (TQFP100-P-1414-0.50-K) (Product name : MSM7581TS...Channnel 3 (SIP3, SOP3), and Channel 4 (SIP4, SOP4). The synchronous signals SYXA1 and SYRAI (Channe... |
| Description |
From old datasheet system
ITU-T G.721 4ch ADPCM TRANSCODER
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| File Size |
163.29K /
18 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HHF1
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| OCR Text |
...+/-0.4 0.8+0.10/-0.15
123
0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5
5deg
PIN 1.Gate 2.Source 3.Drain UNIT:mm
9.5MAX
ABSOLUTE ...CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
50 CHANNEL DISSIPATION Pch(W) 40
20 10 0 0 40 80 ... |
| Description |
Silicon MOSFET Power Transistor 30MHz,6W
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| File Size |
197.08K /
7 Page |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HVF1-101 RD06HVF1
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| OCR Text |
...o +150 C C/W junction to case 4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25C, UNLESS O...CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
Silicon MOSFET Power Transistor 175MHz,6W
50 CHAN... |
| Description |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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| File Size |
374.92K /
8 Page |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD15HVF1 RD15HVF1-15
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| OCR Text |
...n to case RATINGS 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6
Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz...CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
100 CHANNEL DISSIPATION Pch(W) 80
40 20 0 0 40 80... |
| Description |
Silicon MOSFET Power Transistor, 175MHz520MHz,15W
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| File Size |
363.09K /
9 Page |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD16HHF1 RD16HHF1-15
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| OCR Text |
... V Tc=25C 56.8 W Zg=Zl=50 0.8 W 5 A C 150 -40 to +150 C C/W junction to case 2.2
Note 1: Above parameters are guaranteed independently.
...CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
80 CHANNEL DISSIPATION Pch(W)
60 Ids(A)
40 20
... |
| Description |
Silicon MOSFET Power Transistor 30MHz,16W
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| File Size |
272.16K /
8 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD20HMF1
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| OCR Text |
...
22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor,900MHz,20W
OUTLINE
R...CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS 10
Ta=+25C Vds=10V
8 6 I... |
| Description |
Silicon MOSFET Power Transistor,900MHz,20W
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| File Size |
333.23K /
7 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD30HUF1
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| OCR Text |
...plifiers applications.
7.2+/-0.5
OUTLINE
*High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz *High Efficiency: 55%typ.
2 3
...CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 CHANNEL DISSIPATION Pch(W) 80 Ids(A) 0 40 80 120 16... |
| Description |
Silicon MOSFET Power Transistor/520MHz/30W
Silicon MOSFET Power Transistor,520MHz,30W
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| File Size |
386.46K /
7 Page |
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it Online |
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