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IXYS CORP
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| Part No. |
GX60N60C2D1
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| OCR Text |
...1 25 o c v ge = 1 5v v ce = 400v i c = 50a i c = 1 00a fig. 9. dependence of e off on i c 0 1 2 3 4 5 20 30 40 50 60 70 80 90 10...25a v g e = 1 5v v c e = 400v r g = 2 ohms r g = 1 0 ohms - - - - - i c = 75a
? 2003 ixy... |
| Description |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
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| File Size |
615.83K /
5 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
Infineon Technologies A...
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| Part No. |
SGW15N60 SGB15N60 SGP15N60
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 21)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25...25a 20A 15A 10A 5A 0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power diss... |
| Description |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT
IGBTs & DuoPacks - 15A 600V TO263AB SMD IGBT
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology
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| File Size |
411.41K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRFF310 2476
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| OCR Text |
...mary
Part Number IRFF310 BVDSS 400v RDS(on) 3.6 ID 1.25a
IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400v, N-CHANNEL
The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transisto... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
From old datasheet system
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
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| File Size |
128.27K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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