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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDP6060 NDB6060
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| OCR Text |
...= 0 V, f = 1.0 MHz 48 10 19 2 1.4 2.9 2.3 0.02 0.032 60 250 1 100 -100 V A mA nA nA
ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 4 ...83mm Intermediate box
TO-220 Packaging Information: Figure 2.0
TO-220 Packaging Information Pack... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
353.27K /
12 Page |
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Vishay
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| Part No. |
1280G 1285G
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| OCR Text |
4 Inch Rectilinear, 5ppm/C and 15ppm/C TCR
FEATURES
* Temperature Coefficient of Resistance (TCR): 15ppm/C (Model 1280G); 5ppm/C (Mode...83mm) B
0.010" (0.25mm) A 0.050" (1.27mm) A 0.039" (0.99mm) A 0.020" (0.51mm) A
0.110" (2.79mm... |
| Description |
3/4 inch rectilinear
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| File Size |
70.43K /
2 Page |
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Fairchild Semiconductor, Corp.
ITT, Corp.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FDP7030BLSS62Z FDB7030BLS
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| OCR Text |
...s(on) = 1 6.5 m w @ v gs = 4.5 v includes syncfet schottky body diode low gate charge ( 15 nc typ ical) high performanc...83mm intermediate box 300 units per eo70 box 5 eo70 boxe s per per interm ediate bo x 1500 uni ts m... |
| Description |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五（巴西）直|6A条（丁）|63AB
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-220AB
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| File Size |
354.76K /
11 Page |
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it Online |
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Price and Availability
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