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  4.800v Datasheet PDF File

For 4.800v Found Datasheets File :: 5685    Search Time::1.468ms    
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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...it RthJC RthJA TO-247AC 0.4 40 K/W Symbol Conditions Value min. 1200 typ. max. - Unit V 2.5 3 3.1 3.7 4 3.6...800V, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. MOC3083M MOC3081M MOC3081M_05 MOC3082M MOC3081M05
OCR Text ...OT CONNECT (TRIAC SUBSTRATE) 4 MAIN TERM. DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting...800V, IF = 0 (note 1) IF = 0 (figure 9, note 3) IDRM1 dv/dt 600 10 1500 500 nA V/s IF = 30 mA VR = 6...
Description 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

File Size 528.75K  /  11 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4654 IGA03N120H2 Q67040-S4648
OCR Text ...220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 C, unless otherwise speci...800V, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT FullPak
HighSpeed 2-Technology

File Size 198.98K  /  10 Page

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    APT1201R4BFLLG

Microsemi Corporation
Part No. APT1201R4BFLLG
OCR Text ... 2 (v gs = 10v, i d = 4.5a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds =...800v, v gs = 15v i d = 9a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = ...
Description POWER MOS 7 FREDFET

File Size 247.31K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4655 IKA03N120H2 Q67040-S4649
OCR Text ...hJA P-TO-220-3-31 P-TO-220-3-34 4.3 5.8 62 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 C, unless otherwis...800V, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125

File Size 332.84K  /  14 Page

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    Infineon Technologies A...
Part No. IPD80R1K4P7
OCR Text ... @ t j=25c 800 v r ds(on),max 1.4 w q g,typ 10 nc i d 4 a e oss @ 500v 0.9 j v gs(th),typ 3 v esd class (hbm) 2 - type/orderingcode pack...800vcoolmosap7powertransistor ipd80r1k4p7 rev.2.0,2016-07-05 final data sheet tableofconten...
Description 800V CoolMOSa P7 Power Transistor

File Size 1,196.03K  /  13 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKW25N120
OCR Text ...A Conditions Max. Value 0.4 1.15 40 Unit K/W Symbol Conditions Value min. 1200 typ. max. - Unit V 2.5 - 3.1 3....800V, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 333.32K  /  13 Page

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