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4-1005 Datasheet PDF File

For 4-1005 Found Datasheets File :: 7355 Search Time::3.656ms
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				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...-- --- 170 63 71 17 150 110 105 4.5 7.5 6930 1750 970 5740 1570 2340 --- --- 1.6 4.0 --- 20 250 200 -200 260 --- --- --- --- --- --- --- ---...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...-- --- 160 41 66 13 120 130 130 4.5 7.5 6450 1690 840 5350 1520 2210 --- --- 2.0 2.3 4.0 --- 20 250 200 -200 240 62 99 --- --- --- --- --- -...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	... VDSS = 55V G S RDS(on) = 4.7m ID = 135AV Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSF...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text	...o Tjmax VDSS = 75V RDS(on) = 4.5m G S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET u...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	AUTOMOTIVE MOSFET 汽车MOSFET 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	359.66K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	...-- --- --- 89 21 30 12 80 55 49 4.5 7.5 3270 520 78 3500 340 640 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	... --- --- 190 52 72 150 20 93 87 4.5 7.5 7960 1260 630 4400 980 1550 --- --- 3.3 4.0 --- 20 250 200 -200 290 --- --- --- --- --- --- --- nH -...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...--- --- 150 31 50 16 140 68 120 4.5 7.5 5310 890 130 6010 570 1140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 2...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...--- --- 150 31 50 16 140 68 120 4.5 7.5 5310 890 130 6010 570 1140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 2...1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occur...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC8178TB UPC8179 UPC8179TB UPC8179TB-E3 UPC8128TB UPC8151TB UPC8152TB UPC8179TB1 PC8179TB-E3
OCR Text	...ltage * High efficiency : ICC = 4.0 mA TYP. @ VCC = 3.0 V : VCC = 2.4 to 3.3 V : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dB...1005 chip inductor can be chosen. 2 3 1 5 6 VCC 2.4 to 3.3 - Power supply...
Description	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	150.83K / 28 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MC68HC11 MC68HC11A0 MC68HC11A0FN MC68HC11A0P MC68HC11A1 MC68HC11A1FN MC68HC11A1MFN MC68HC11A1MP MC68HC11A1P MC68HC11A1VFN MC68HC11A1VP MC68HC11A8 MC68HC11A8FN1 MC68HC11A8P1 MC68HC11A8TS MC68HCP11A1P MC68HCP11A1VFN MC68HCP11A1FN MC68HCP11A1MFN MC68HCP11A1MP MC68HCP11A1VP MC68HCP11 MC68HC11AX
OCR Text	................................13 4 Electrically Erasable Programmable Read-Only Memory (EEPROM) ................................................1005 $1006 $1007 $1008 $1009 $100A $100B $100C $100D $100E $100F $1010 $1011 $1012 $1013 $1014 $1015...
Description	8-Bit Microcontrollers
File Size	264.20K / 45 Page	View it Online	Download Datasheet

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