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  3.44a Datasheet PDF File

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text ... FO AD IN 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATI...44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT5010JLL

ADPOW[Advanced Power Technology]
Part No. APT5010JLL
OCR Text ...DV NF A I 500 44 176 30 40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STAT...44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.35K  /  2 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...ts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Diss...44A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Re...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ...ts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Vol...44A j G L APT Reserves the right to change, without notice, the specifications and information co...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ...ts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Vol...44A j G L APT Reserves the right to change, without notice, the specifications and information co...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ...ts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Diss...44A j G L APT Reserves the right to change, without notice, the specifications and information co...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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    APT8015JVFR APT8015

http://
ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ... Capacitance Total Gate Charge 3 APT8015JVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25...44A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Re...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

File Size 77.92K  /  4 Page

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ... Capacitance Total Gate Charge 3 APT8015JVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C ...44A j G L APT Reserves the right to change, without notice, the specifications and information co...
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 75.34K  /  4 Page

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    UCN5832 UCN5832A UCN5832EP UCQ5832EPNBSP 5832 UCQ5832EP

Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
Part No. UCN5832 UCN5832A UCN5832EP UCQ5832EPNBSP 5832 UCQ5832EP
OCR Text ...OUND STROBE OUT 1 OUT OUT OUT 2 3 1 2 3 4 5 6 7 8 REGISTER REGISTER LATCHES V DD 40 CLOCK 39 38 37 36 35 34 33 32 SERIAL DATA OUT OUT...44A in 0.180 0.165 Dimensions in Millimeters (for reference only) 28 18 29 8.10 7.39 0.533...
Description BiMOS II 32-Bit Serial-Input, Latched Driver(用于驱动高分辨率打印磁头(要求安装空间小及高速工作)的BiMOS II 32位串行输入锁存驱动器)
BiMOS II 32-BIT SERIAL-INPUT, LATCHED DRIVERS
From old datasheet system

File Size 76.79K  /  8 Page

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    UCN5833A UCN5833EP 5833 UCN5833

Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
Part No. UCN5833A UCN5833EP 5833 UCN5833
OCR Text ...DD 1 ST 4 40 5 6 3 2 NC OUT 2 OUT 3 OUT 4 OUT 5 OUT 6 OUT 7 OUT 8 OUT 9 OUT10 OUT11 OUT 12 7 8 9 10 OUT31 OUT3...44A in 0.180 0.165 Dimensions in Millimeters (for reference only) 28 18 29 8.10 7.39 0.533...
Description BiMOS II 32-Bit Serial-Input, Latched Driver(为热打印机提供高速工作的BiMOS II 32位串行输入锁存驱动器)
BiMOS II 32-BIT SERIAL-INPUT LATCHED DRIVER

File Size 151.29K  /  8 Page

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