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ST Microelectronics, Inc.
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| Part No. |
STRH80P6FSY3
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| OCR Text |
...4
V
a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
5/12
Electrical characteristics
STRH80P6FSY3
Table 9.
Ion Kr Xe
Single event effect, SOA(1)
Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV)... |
| Description |
P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET
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| File Size |
279.65K /
12 Page |
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ST Microelectronics, Inc.
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| Part No. |
STRH40P10FSY3
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| OCR Text |
...7
V
a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
5/12
Electrical characteristics
STRH40P10FSY3
Table 9.
Ion Kr Xe
Single event effect, SOA(1)
Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV... |
| Description |
P-channel 100V - 0.060 Ohm - TO-254AA - Rad-hard low gate charge STripFET Power MOSFET
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| File Size |
284.74K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STRH100N10FSY01 STRH100N10FSY02 STRH100N10FSY1
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| OCR Text |
...tion done according to the escc 22900 specification, window 1). table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current ... |
| Description |
48 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
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| File Size |
401.61K /
17 Page |
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ST Microelectronics
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| Part No. |
STRH100N10FSY302 STRH100N10FSY301
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| OCR Text |
...tion done according to the escc 22900 specification, window 1). table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current ... |
| Description |
48 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
|
| File Size |
398.85K /
17 Page |
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it Online |
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ST Microelectronics
|
| Part No. |
STRH100N10FSY3
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| OCR Text |
...456 ns c a a. according to escc 22900 specification, co60 gamma rays, dose rags:0.1rad/sec. table 9. on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gs... |
| Description |
72 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
213.69K /
13 Page |
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ST Microelectronics
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| Part No. |
STRH100N6FSY2
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| OCR Text |
...0.8 ns c a a. according to escc 22900 specification, co60 gamma rays, dose rags:0.1rad/sec. table 8. on/off states symbol parameter test condictions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i g... |
| Description |
80 A, 60 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
200.78K /
9 Page |
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ST Microelectronics
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| Part No. |
STRH100N6FSY3 STRH100N6FSY1
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| OCR Text |
...633 ns c a a. according to escc 22900 specification, co60 gamma rays, dose rags:0.1rad/sec. table 9. on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gs... |
| Description |
80 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
212.20K /
13 Page |
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it Online |
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ST Microelectronics
|
| Part No. |
STRH100N10FSY2
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| OCR Text |
...9.6 ns c a a. according to escc 22900 specification, co60 gamma rays, dose rags:0.1rad/sec. table 8. on/off states symbol parameter test condictions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i g... |
| Description |
72 A, 100 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
199.77K /
9 Page |
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it Online |
Download Datasheet |
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