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  20 25 30a Datasheet PDF File

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...rew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Therm...25 VDS = 75V, VGS = 0V A 250 VDS = 60V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 160 ID ...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ... Temperature Range Max. 30 20 90 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS ...25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V)...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...rage Temperature Range Max. 20 20 110 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/C C Thermal Resistance Parameter RJC ...25 C 1 10 100 10 0.1 10 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    MAX800 MAX800L MAX800LCPE MAX800LCSE MAX800LEPE MAX800LESE MAX800M MAX800MCPE MAX800MCSE MAX800MEPE MAX800MESE MAX691 MA

Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX800 MAX800L MAX800LCPE MAX800LCSE MAX800LEPE MAX800LESE MAX800M MAX800MCPE MAX800MCSE MAX800MEPE MAX800MESE MAX691 MAX691A MAX691AC MAX691ACPE MAX691ACSE MAX691ACWE MAX691AD MAX691AEJE MAX691AEPE MAX691AESE MAX691AEWE MAX691AMJE MAX693A MAX693AC MAX693ACPE MAX693ACSE MAX693ACWE MAX693AD MAX693AEJE MAX693AEPE MAX693AESE MAX693AEWE MAX693AMJE
OCR Text ....4 3.5 3 0.75 x VCC 0.8 -50 -10 20 50 10 20 mA V V A V mA V A 3 0.3 0.4 V MAX UNITS mV V mA A MAX691A/MAX693A/MAX800L/MAX800M 1 4.50 4.25 4.55 4.30 RESET AND WATCHDOG TIMER MAX691A, MAX800L Reset Threshold Voltage MAX693A, MAX800M ...
Description Microprocessor Supervisory Circuits
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:800V; Current, It av:500A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes

File Size 155.34K  /  16 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...pul s VGE EAS tSC Ptot 84 84 20 130 10 313 V mJ s W VGE = 15V, 100V VCC 1200V, Tj 150C 1) Allowed number of short circuits: <10...25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    2SJ340

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ340
OCR Text ... 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source SA...25 30 40 3800 1200 300 30 150 450 220 -1.0 -1.5 40 55 Conditions Ratings min -60 20 -100 10 -2.0 typ...
Description Ultrahigh-Speed Switching Applications 超高速开关应

File Size 40.73K  /  4 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...stg Note2 Note1 Ratings -30 20 -30 -120 -30 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ471 Electrical Characteristics (Ta = ...25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max -- -- -10 10 -2.0 35 60 -- -- -- -- -- -- -- -- -- ...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ479 2SJ479L 2SJ479S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ479 2SJ479L 2SJ479S
OCR Text ...stg Note2 Note1 Ratings -30 20 -30 -120 -30 50 150 -55 to +150 Unit V V A A A W C C 2 2SJ479(L), 2SJ479(S) Electrical Characte...25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max -- -- -10 10 -2.0 35 60 -- -- -- -- -- -- -- -- -- ...
Description Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching

File Size 37.54K  /  7 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...rature Storage Temperature *f = 20 kHz, Duty Cycle 10% (+Side) **PW 10 s, Duty Cycle 1% VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch...25 20 15 10 5 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - ...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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