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  2.4-ghz Datasheet PDF File

For 2.4-ghz Found Datasheets File :: 13536    Search Time::1.016ms    
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    SIEMENS AG
Part No. 24-28GHZDOUBLER
OCR Text ...ansistor processing technology. 24 - 28 ghz gaas doubler mmic 24 - 28 ghz doubler preliminary data sheet  monolithic microwave integrated circuit (mmic) frequency doubler (coplanar design)  input/output matched to 50 ?  input frequency r...
Description 24 - 28 GHz GaAs Doubler MMIC(25 - 28 GHz砷化镓微波倍频

File Size 90.37K  /  3 Page

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    Alpha Industries Inc
Part No. AA230-24
OCR Text 24 (Previously AD230-24)* Features I Attenuation in 4 dB steps to 28 dB with High Accuracy I Low Cost SOIC-14 Plastic Package I Low D...GHz GHz GHz GHz Min. Typ. 1.1 1.2 1.3 1.9 28 DC-1.0 GHz DC-2.0 GHz VSWR (I/O) DC-2.0 GHz (0.2 + 3% ...
Description GaAs IC 3 Bit Digital Attenuator 4 dB LSB DC2 GHz

File Size 43.36K  /  3 Page

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    SIEMENS AG
Part No. 24-27GHZMIXER
OCR Text ...ansistor processing technology. 24 - 27 ghz gaas mixer mmic 24 - 27 ghz mixer preliminary data sheet ? monolithic microwave integrated circuit (mmic) single balanced mixer (coplanar design)  two if ports allow the use of the mmic as up- an...
Description 24 - 27 GHz GaAs Mixer MMIC(24 - 27 GHz砷化镓微波混频器)

File Size 129.42K  /  6 Page

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    NEL2004F02-24

NEC[NEC]
Part No. NEL2004F02-24
OCR Text 24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter...
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

File Size 87.20K  /  12 Page

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    NEL200101-24

NEC Corp.
NEC[NEC]
Part No. NEL200101-24
OCR Text 24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter...
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

File Size 86.41K  /  12 Page

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    TriQuint Semiconductor, Inc.
Part No. TGF2022-24
OCR Text ...hemt tgf2022-24 key features and performance ? frequency range: dc - 20 ghz ? > 34 dbm nominal psat ? 58% maximum pae ? 42 dbm nominal oip3 ? 13 db nominal power gain ? suitable for high re liability appli...
Description
File Size 130.68K  /  8 Page

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    Skyworks Solutions
Part No. AK002D2-24
OCR Text ...soic-14 plastic package ak002d2-24 pin 14 0.050 (1.27 mm) bsc pin 1 pin 1 indicator 0.158 (4.01 mm) 0.150 (3.81 mm) 0.050 (1.27 mm) 0.016 ...ghz 1.7 1.8 db dc?1.0 ghz 1.9 2.1 db dc?2.0 ghz 2.2 2.5 db attenuation accuracy 4 16 32 48 bits dc?1...
Description GaAs IC 2 Bit Digital Attenuator

File Size 442.63K  /  2 Page

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    SIEMENS AG
Part No. 24-32GHZLNA
OCR Text ...ansistor processing technology. 24 - 32 ghz gaas low noise amplifier mmic 24 - 32 ghz lna preliminary data sheet ? two-stage monolithic microwave integrated circuit (mmic) hemt amplifier (coplanar design)  input/output matched to 50 ?  fr...
Description 24 - 32 GHz GaAs Low Noise Amplifier MMIC(24 - 32 GHz砷化镓微波低噪声放大

File Size 105.20K  /  4 Page

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    TA008-055-20-24

Transcom, Inc.
Part No. TA008-055-20-24
OCR Text 24 REV1_20040412 0.8 - 5.5 GHz 25 dBm Amplifier FEATURES * P-1 dB: 25 dBm * IP3: 34 dBm * Bias Condition: 750 mA @ 12 V * Small Signal Gain: 20 dB DESCRIPTION The TA008-055-20-24 is a 25 dBm power amplifier designed for operation in...
Description 0.8 - 5.5 GHz 25 dBm Amplifier

File Size 26.58K  /  1 Page

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