1955 pdf Datasheet P2 Full Text Search --- IC-ON-LINE


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1955 Datasheet PDF File

For 1955 Found Datasheets File :: 248 Search Time::2.656ms
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				Freescale Semiconductor, Inc Freescale Semiconductor, In...
Part No.	MRF7S19100NR108 MRF7S19100NBR1
OCR Text	...watts) pep v dd = 28 vdc, f1 = 1955 mhz, f2 = 1965 mhz two?tone measurements, 10 mhz tone spacing 500 ma 1000 ma 18 17 16 10 200 g ps , power gain (db) figure 6. third order intermodulation distortion versus output power ?10 i dq = 500 ma...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	591.02K / 18 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	EF89
OCR Text	1955.12.12 2 2 1955.12.12 3 3 1955.04.04 4 a 1955.04.04 5 b 1955.03.03 6 c 1955.03.03 7 d 1955.03.03 8 e 1955.03.03 9 f 1955.03.03 10 g 1955.03.03 11 fp 1999.06.29
Description	PENTODE WITH VARIABLE MUTUAL CONDUCTANCE FOR USE AS R.F. or I.F. AMPLIFIER
File Size	280.28K / 11 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF5P20180HR6
OCR Text	...00 mA 2000 mA VDD = 28 Vdc f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing IDQ = 800 mA 14.5 14 13.5 13 12.5 12 11.5 11 800 mA VDD = 28 Vdc f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone ...
Description	RF Power Field Effect Transistor
File Size	360.15K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	K81A
OCR Text	1955.12.12 2 2 1955.12.12 3 3 1955.12.12 4 a 1956.01.01 5 b 1956.01.01 6 fp 1999.08.29
Description	NOISE DIODE FOR USE AS A STANDARD NOISE SOURCE FOR METRICWAVES
File Size	142.22K / 6 Page	View it Online	Download Datasheet

				Motorola Semiconductor Products
Part No.	MRF7S19100N
OCR Text	...50 mA 17 -10 VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing -20 18 -30 IDQ = 500 mA -40 1000 mA -50 750 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1250 mA 16 15 500 mA VDD = 28 ...
Description	1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs From old datasheet system
File Size	529.85K / 16 Page	View it Online	Download Datasheet

				http://
Part No.	MW6IC1940NBR1
OCR Text	...v dd =28vdc,i dq1 = 200 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 28 26 24 200 figure 7. two--tone power gain versus output power @ i dq1 = 200 ma g ps , power gain (db) 29 23 25 27 330 ma 550 ma 440 ma 220...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	835.17K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	EL84
OCR Text	1955.03.03 2 2 1955.03.03 3 3 1953.11.11 4 4 1953.11.11 5 5 1955.03.03 6 6 1955.03.03 7 a 1955.03.03 8 b 1955.03.03 9 c 1957.10.10 10 e 1957.10.10 11 e 1957.10.10 12 f 1957.10.10 13 g 1957.10.10 14 h 1957.10.10 15 i 1957.10.10 16 j 1957.10....
Description	OUTPUT PENTODE PENTHODE DE SORTIE ENDPENTODE
File Size	525.67K / 21 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF7S19170HR308
OCR Text	...watts) pep v dd = 28 vdc, f1 = 1955 mhz, f2 = 1965 mhz two?tone measurements, 10 mhz tone spacing 17 16 10 400 g ps , power gain (db) 18 1750 ma 700 ma 1400 ma 1050 ma i dq = 2100 ma figure 6. third order intermodulation distortion vers...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	405.67K / 13 Page	View it Online	Download Datasheet

For 1955 Found Datasheets File :: 248 Search Time::2.656ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |