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Infineon Technologies A...
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| Part No. |
PTAB182002FCV1R0
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| OCR Text |
...carrier wcdma performance at 1842 mhz, 28 v (doherty confguration) - average output power = 44.6 dbm - linear gain = 15.5 db - effc...50 w (average) output power (one-carrier wcdma signal, 10 db par, doherty test fxture) ? pb-free... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
439.47K /
13 Page |
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Infineon Technologies A...
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| Part No. |
PTFB181702FCV1R0
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| OCR Text |
...g ? typical cw performance, 1842 mhz, 28 v - output power at p 1db = 180 w - effciency = 58% - gain = 18.5 db ? capable of hand...50 15 16 17 18 19 20 34 36 38 40 42 44 46 48 50 52 efficiency (%) ... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
520.30K /
7 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXFC192207SH
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| OCR Text |
... 3.84 mhz 1805 imdl 1805 imdu 1842.5 imdl 1842.5 imdu 1880 imdl 1880 imdu c192207sh_g3 0 10 20 30 40 50 60 15 16 17 18 19 20 21 27 32 37 42 47 52 57 efficiency (%) gain (db) output power (dbm) pulsed cw performance at various v ... |
| Description |
Broadband internal input and output matching
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| File Size |
379.12K /
7 Page |
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it Online |
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