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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
2PG401
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| OCR Text |
...ntrol large current: IC(peak) = 130a q Allowing to provide with the surface mounting package
7.20.3 0.80.2
unit: mm
7.00.3 3.00.2
...300v, IC = 130a VGE = 5V, Rg = 25 Conditions VCE = 320V, VGE = 0 VGE = 8V, VCE = 0 IC = 1mA, VGE = 0... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
21.11K /
1 Page |
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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
2PG402
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| OCR Text |
...ntrol large current: IC(peak) = 130a q Housed in the surface mounting package
unit: mm
6.50.1 5.30.1 4.350.1 3.00.1
q For flash-light f...300v, IC = 130a VGE = 5V, Rg = 25 Conditions VCE = 320V, VGE = 0 VGE = 8V, VCE = 0 IC = 1mA, VGE = 0... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
32.70K /
2 Page |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP20G45EJ AP20G45EH
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| OCR Text |
...R TRANSISTOR
VCES
C
450V 130a
ICP
E
* High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash App...300v VGE=5V VCC=200V IC=40A RG=25 VGE=5V VGE=0V VCE=25V f=1.0MHz
Data and specifications subject ... |
| Description |
N-CHANNEL INSULATED GATE
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| File Size |
69.95K /
4 Page |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT30M19JVR
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| OCR Text |
130a 0.019
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 300v 130a 0.019 Ohm
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| File Size |
74.50K /
4 Page |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT20ASL-8
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| OCR Text |
.................................. 130a
MP-3
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 2...300v IP = 120A CM = 300F VGE = 12V
MAXIMUM CONDITION 350V 130a 400F
Notice 1. Gate drive volta... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
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| File Size |
25.29K /
2 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
FGS15N40L FGS15N40LTF
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| OCR Text |
...* High Peak Current Capability (130a) * Easy Gate Drive
Application
* Strobe Flash
C C
C
C G E
C
E
E
G E
8-SOP
...300v , IC = 130a VGE = 4.0V , RG = 15 * Resistive Load ----0.15 1.5 0.15 1.5 --0.3 3.0 us us us us
... |
| Description |
Electrical Characteristics of IGBT
Discrete, IGBT
High Input Impedance
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| File Size |
203.53K /
6 Page |
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