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  130-y Datasheet PDF File

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...--- --- --- 86 250 1.6 A 13 1.5 130 380 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS ...y 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.63...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...00 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- ...Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...5C, IS = -38A, VGS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 350 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is ...y (m J) TO P 2000 BOT TO M ID -1 6A - 27A -38 A RG D .U .T IA S D R IV E R 0.01 ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...C, IS = -38A, V GS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 350 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is d...y (m J) VDS L 2500 TO P 2000 RG D .U .T IA S D R IV E R 0 .0 1 VD D A BOT TO M ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...= 25C, IS = 9.0A, VGS = 0V --- 130 190 ns TJ = 25C, I F = 9.0A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on...Y R D S (o n) I D , D rain Current (A ) 100 T J = 1 75 C 10 10 s T J = 25 C 10 ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...--- --- --- --- 2.8 A 37 1.0 80 130 V ns nC --- 0.78 --- 40 --- 63 Conditions MOSFET symbol showing the G integral reverse p-n junction d...Y 14.5M- 1982. 2. C O NT RO LLING D IME NS IO N : IN CH. 3. D IME NS IO NS A RE S HO W N IN M ILLIME...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ... ns TJ = 25C, IF = -7.2A --- 84 130 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive ...Y R D S (o n) 10 s 10 TJ = 15 0C TJ = 2 5C -I D , D rain C urrent (A ) 10 100s ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... ns TJ = 25C, IF = -7.2A --- 84 130 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Re...y (m J) VDS L 250 TO P 200 RG D .U .T IA S D R IV E R 0 .0 1 VD D A B OTTO M ID...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    LM339P LM139A LM139D LM239P LM139P LM339A LM239A

ST Microelectronics
SGS Thomson Microelectronics
STMicroelectronics
Part No. LM339P LM139A LM139D LM239P LM139P LM339A LM239A
OCR Text ...0.335 0.100 0.600 0.280 0.201 0.130 0.100 DIP14.TBL 8/10 PM-DIP14.EPS LM139,A - LM239,A - LM339,A PACKAGE MECHANICAL DATA 14 PINS - PLASTIC MICROPACKAGE (SO) Dimensions A a1 a2 b b1 C c1 D E e e3 F G L M S Min. 0.1 0.35 0.1...
Description LOWPOWER QUAD VOLTAGE COMPARATORS

File Size 90.85K  /  10 Page

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