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  12a 650v Datasheet PDF File

For 12a 650v Found Datasheets File :: 39    Search Time::1.5ms    
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    SSFP12N65

GOOD-ARK Electronics
Part No. SSFP12N65
OCR Text ...atability VDSS = 650v ID25 = 12a RDS(ON) = 0.65 Description StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and red...
Description StarMOST Power MOSFET

File Size 122.90K  /  2 Page

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    HFP12N65S

SemiHow Co.,Ltd.
Part No. HFP12N65S
OCR Text ...tion temperature 2. L=11mH, IAS=12a, VDD=50V, RG=25, Starting TJ =25C 3. ISD12a, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV...
Description 650v N-Channel MOSFET

File Size 707.65K  /  8 Page

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    HFS12N65S

SemiHow Co.,Ltd.
Part No. HFS12N65S
OCR Text ...tion temperature 2. L=11mH, IAS=12a, VDD=50V, RG=25, Starting TJ =25C 3. ISD12a, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV...
Description 650v N-Channel MOSFET

File Size 788.23K  /  7 Page

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    3VD499650YL

Silan Microelectronics Joint-stock
Part No. 3VD499650YL
OCR Text ...10V, ID=6.0A VGS=30V, VDS=0V IS=12a, VGS=0V Min. 650 2.0 Typ. Max. 4.0 1.0 0.8 100 1.4 Unit V V A nA V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1
Description HIGH VOLTAGE MOSFET CHIPS

File Size 75.82K  /  1 Page

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    SFP12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. SFP12N65
OCR Text 12a,650v,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 30nC) Fast Switching Capability 100% Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced ...
Description Silicon N-Channel MOSFET

File Size 264.84K  /  7 Page

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    WFP12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFP12N65
OCR Text 12a,650v,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem ...
Description Silicon N-Channel MOSFET

File Size 612.69K  /  7 Page

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    3S1265R

Fairchild Semiconductor
Part No. 3S1265R
OCR Text ...-3P-5L(Forming) Rating 650v, 12a 650v, 12a 650v, 12a Operating Temperature -25C to +85C -25C to +85C -25C to +85C www.DataSheet4U.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T...
Description Search --To KA3S1265R

File Size 179.10K  /  12 Page

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    IRFB9N65 IRFB9N65A

International Rectifier
Part No. IRFB9N65 IRFB9N65A
OCR Text ...DD A 400 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalan...
Description Power MOSFET(Vdss=650v/ Rds(on)max=0.93ohm/ Id=8.5A)
650v Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 107.63K  /  8 Page

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    PJF12N65 PJP12N65

Pan Jit International Inc.
Part No. PJF12N65 PJP12N65
OCR Text 12a , 650v, RDS(ON)=0.8@VGS=10V, ID=6.0A * * * * * * Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2...
Description 650v N-Channel Enhancement Mode MOSFET

File Size 218.11K  /  6 Page

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    WFF12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFF12N65
OCR Text 12a,650v,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem ...
Description Silicon N-Channel MOSFET

File Size 623.15K  /  7 Page

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