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1066 800 Datasheet PDF File

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				Sony
Part No.	CPD-110EST
OCR Text	...8 40 1 3 36 768 60.020 Hz lines 1066 42 1 3 38 1024 31.778 6.356 0.636 3.813 1.907 25.422 43.269 kHz usec 23.111 5.333 1.556 1.556 2.222 17....800 X 600 49.500 MHZ MODE 5 800 X 600 56.250 MHZ MODE 6 832 X 624 57.283 MHZ PRIMARY MODE 7 1024 X 7...
Description	(CPD-110EST/GS) Service Manual
File Size	1,850.07K / 40 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R881869D K4R571669D
OCR Text	... (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are cap...800 800 1066 1066 1066 800 800 tRAC (Row Access Time) ns 32P 32 35 40 45 32P 32 35 40 45 Features...
Description	256/288Mbit RDRAM(D-die)
File Size	309.27K / 20 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0
OCR Text	... (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are cap...800 32P 40 Part Number 512M x 18 -CT9 -CM8 MR18R326GAG0-CT9 MR18R326GAG0-CM8 Form Fac...
Description	(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片，32秒银行，32K/32ms参考，.5V (32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V
File Size	256.70K / 14 Page	View it Online	Download Datasheet

				Atmel, Corp. TEMIC[TEMIC Semiconductors]
Part No.	U2642B-FP U2642B
OCR Text	... 16 14 13 12 11 9 tON [ms] 1280 1066 915 800 710 640 581 533 493 457 426 320 tINT [s] 20.0 17.0 14.0 12.5 11.0 10.0 9.0 8.2 7.6 7.0 6.5 5.0 tAW [s] 11.6 9.6 8.3 7.2 6.4 5.8 5.3 4.8 4.5 4.1 3.9 2.9 tDEL [s] 1680 1400 1200 1050 933 840 763 70...
Description	Intermittent- and Wipe/Wash Control for Wiper Systems 间歇性和清洗控制雨刮器系
File Size	165.93K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP30B120KD-EP
OCR Text	...tance Min. Typ. 169 19 82 1066 1493 2559 1660 2118 3778 50 25 210 60 2200 210 85 Max. Units Conditions IC = 25A 254 29 nC VCC =600V...800 0 10 20 I F (A) 30 40 50 60 Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT
File Size	162.22K / 12 Page	View it Online	Download Datasheet

				AMSCO[austriamicrosystems AG]
Part No.	AS1106PL AS1106 AS1106WE AS1106WE-T AS1106WL AS1106WL-T AS1107WL-T AS1106PE AS1107 AS1107PL AS1107WL
OCR Text	... Max 7 7 7 or VDD + 0.3 500 100 1066 941 Units V V V mA mA mW mW C C C C C C % V V mA Notes Continuous Power Dissipation (TAMB = +8...800 1300 Hz mA mA mA/s % A A mA mA s s % Conditions Min 2.7 Typ 5.0 Max 5.5 10 1 Unit V A mA Outp...
Description	8-Digit LED Display Drivers
File Size	489.94K / 20 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 MR18R16224DF0 MR18R1622GDF0 MR16R1622DF0 MR16R16228DF0 MR16R162GDF0 MR18R162GDF0
OCR Text	... (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are cap...800 800 1066 1066 1066 800 800 1066 1066 1066 800 800 1066 1066 1066 800 800 32P 32 35 40 45 32P 32 ...
Description	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
File Size	440.00K / 16 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 MR16R16248EG0 MR16R1624EG0-CK8 MR16R1624EG0-CM8 MR16R1624EG0-CT9 MR16R1624GEG0 MR16R162GEG0-CM8 MR16R162GEG0-CT9 MR18R1624EG0-CK8 MR18R1624EG0-CM8 MR18R1624EG0-CT9 MR18R1624GEG0 MR18R1628EG0-CK8 MR18R1628EG0-CT9 MR18R162GEG0-CK8 MR18R162GEG0-CM8 MR18R162GEG0-CT9 MR18R16248EG0 MR16R1628EG0-CM8 MR16R1628EG0-CT9
OCR Text	... (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are cap...800 800 1066 800 800 1066 800 800 32P 40 45 32P 40 45 32P 40 45 Part Number -CT9 64M x 16/18 -...
Description	From old datasheet system CONN HEADER 20POS DL PCB 30GOLD Key Timing Parameters 关键的定时参 CONN HEADER 18POS DL PCB 30GOLD 关键的定时参
File Size	439.82K / 16 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0-CM8 MR18R1628AF0-CK8 MR18R1628AF0-CM8 MR18R1628AF1-CN9 MR18R1628AF1-CT9 MR18R1622AF0-CK8 MR18R1622AF0-CM8 MR18R162GAF0-CK8 MR18R162GAF0-CM8 MR18R162GAF0-CN9 MR18R162GAF0-CT9 MR18R1624AF0-CK8 MR18R1624AF0-CM8 MR18R1624AF1-CN9 MR18R1624AF1-CT9 MR16R1622AF0-CK8 MR16R1622AF0-CM8 MR16R162GAF0-CK8 MR16R162GAF0-CM8 MR16R1628AF0-CK8 MR16R1628AF0-CM8
OCR Text	...sion 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning * Modify TPD Value of AC electrical specifications * Modify the Values of AC electrical specifications for RIMM Module Version ...
Description	64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V 16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
File Size	417.13K / 16 Page	View it Online	Download Datasheet

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