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  1000v s Datasheet PDF File

For 1000v s Found Datasheets File :: 6850    Search Time::5.328ms    
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    FGA50N100BNTD

Fairchild Semiconductor
Part No. FGA50N100BNTD
OCR Text ...d advanced npt technology, the 1000v np t igbt offers superior conduction and switching performances, high avalanche ruggedness and easy ...s s i p a t i o n @ t...
Description 1000v, NPT Trench IGBT

File Size 336.46K  /  7 Page

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    FGA50N100BNTD2

Fairchild Semiconductor
Part No. FGA50N100BNTD2
OCR Text ... advanced npt technology, the 1000v npt igbt offers superior cond uction and switching performances, high avalanche ruggedne ss ...s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 500 fga50n100bntd...
Description 1000v, NPT Trench IGBT

File Size 813.17K  /  9 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTDF400AK100G
OCR Text 1000v IC = 400A @ Tc = 70C Application * * * * * Anti-Parallel diode Uninterruptible Power supply (UPs) Induction heating Welding equipment...s Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 400A VR = 667V di/dt = 400...
Description Diode Phase leg Power Module

File Size 212.58K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APTDF400AK100
OCR Text 1000v IC = 400A @ Tc = 70C Application * * * * * Anti-Parallel diode Uninterruptible Power supply (UPs) Induction heating Welding equipment...s Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 400A VR = 667V di/dt = 400...
Description Dual diodes Power Module

File Size 236.49K  /  4 Page

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    2SK2004-01L 2SK2004-01S

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2sK2004-01L 2sK2004-01s
OCR Text ...che Proof N-channel MOs-FET 1000v 3,6 4A 80W > Outline Drawing > Applications switching Regulators UPs DC-DC converters ...s Tch=25C 1,1 400 3 Unit V V A mA nA s pF pF pF ns ns ns ns A A A V ns C - Thermal Charact...
Description N-channel MOs-FET

File Size 218.14K  /  2 Page

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    DG858BW45-15

Dynex Semiconductor
Part No. DG858BW45-15
OCR Text ...rm 4500v i t(av) 1180a dv d /dt 1000v/ m s di t /dt 300a/ m s package outline type code: w. see package details for further information. voltage ratings 4500 conditions type number t vj = 125 o c, i dm = 100ma, i rrm = 50ma repetitive pe...
Description Gate Turn-off Thyristor

File Size 257.88K  /  19 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTDF400KK100G
OCR Text 1000v IC = 400A @ Tc = 70C Application * * * * Uninterruptible Power supply (UPs) Induction heating Welding equipment High speed rectifiers...s Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 400A VR = 667V di/dt = 400...
Description Dual Common Cathode diodes Power Module

File Size 212.10K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APTDF400KK100
OCR Text 1000v IC = 400A @ Tc = 70C Application * * * * Uninterruptible Power supply (UPs) Induction heating Welding equipment High speed rectifiers...s Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 400A VR = 667V di/dt = 400...
Description Dual Common Cathode diodes Power Module

File Size 236.28K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10030L2VR_04 APT10030L2VR APT10030L2VR04
OCR Text 1000v 33A 0.300 POWER MOs V(R) MOsFET Power MOs V(R) is a new generation of high voltage N-Channel enhancement mode power MOsFETs. This...s All Ratings: TC = 25C unless otherwise specified. APT10030L2VR UNIT Volts Amps 1000 33 132 ...
Description Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.

File Size 128.30K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10030L2VFR_04 APT10030L2VFR APT10030L2VFR04
OCR Text 1000v 33A 0.300 POWER MOs V(R) FREDFET Power MOs V(R) is a new generation of high voltage N-Channel enhancement mode power MOsFETs. Th...s All Ratings: TC = 25C unless otherwise specified. APT10030L2VFR UNIT Volts Amps 1000 33 132...
Description Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.

File Size 129.11K  /  4 Page

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