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NEC, Corp. NEC Corp.
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| Part No. |
2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ
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| OCR Text |
...NCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
Ciss 1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF
VDD = -30 V VGS = -10 V RG = 0 td(off) t... |
| Description |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET MOS FIELD EFFECT TRANSISTOR MOS场效应管 Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
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| File Size |
82.75K /
8 Page |
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NEC, Corp. NEC Corp.
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| Part No. |
2SJ605-S 2SJ605-ZJ 2SJ605-ZJ-AZ
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| OCR Text |
...10 tr
VGS = 0 V f = 1 MHz
10000 Ciss
1000 Coss Crss 100 -0.1 -1 -10 -100
1 -0.1
-1
-10
-100
VDS - Drain to Source Vo...s data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor produ... |
| Description |
65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB MOS FIELD EFFECT TRANSISTOR MOS场效应管 Pch power MOSFET 60V RonMAX=20m ohm TO-220AB,TO-262,TO-263
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| File Size |
86.08K /
8 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30KD-STRL
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| OCR Text |
...ry Current vs. dif/dt
600
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
400
d i(re c )M /d t - (A / s)
1000
Q R R - (n C )
IF = 6.0 A
I F = 24 A I F = 12 A
I F = 12 A
1... |
| Description |
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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| File Size |
223.21K /
10 Page |
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it Online |
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Price and Availability
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