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  1 2 4m-bit Datasheet PDF File

For 1 2 4m-bit Found Datasheets File :: 3459    Search Time::6.906ms    
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    EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8

ETRON[Etron Technology, Inc.]
ETRON[Etron Technology Inc.]
Part No. EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text 1.1 Jan./2002) 4M x 16 DDR Synchronous DRAM (SDRAM) Features Fast clock rate: 300/285/250/200/166/143/125MHz Differential Clock CK & /C...2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved * Individual byte write mas...
Description 4M x 16 DDR Synchronous DRAM (SDRAM)

File Size 154.94K  /  26 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...3V 5V/3.3V A0-A11 (A0 - A10)*1 A0 - A9 (A0 - A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Data out Buffer OE Not...2)D-B * K4E17(6)0411(2)D-F VCC DQ0 DQ1 W RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 19 ...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...3V 5V/3.3V A0-A11 (A0 - A10)*1 A0 - A9 (A0 - A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Data out Buffer OE Not...2)D-B * K4F17(6)0411(2)D-F VCC DQ0 DQ1 W RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 19 ...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    KM23C4100DET KM23C4100DT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
http://
Part No. KM23C4100DET KM23C4100DT
OCR Text ...ns) 80 . . . . . . . . A0 A-1 Y BUFFERS AND DECODER SENSE AMP. DATA OUT BUFFERS PIN CONFIGURATION N.C 1 2 3 4 5 6 7 8 9 44 N.C 43 N.C 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 ... CE OE BHE CONTR...
Description 4m-bit (512Kx8 /256Kx16) CMOS MASK ROM

File Size 71.59K  /  4 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSU...2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 ...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ...C 35ns 40ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSU...2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 ...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ...HPC 20ns 25ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Memory Array 4,194,304 x 16 Cells OE Colum...2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 ...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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    LC67F5104A

SANYO[Sanyo Semicon Device]
Part No. LC67F5104A
OCR Text ...C67F5104A 1PIN (Flash ROM 1 ) PIN1 MARK (LC67F5104A 1 ) ON OFF W67F5106TQ LC67F5104A VSS P00/nWAIT P01/nRD P02/EX...2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 100 99 98 97 96 95 94 93 92 91 90...
Description LC67F5104A

File Size 320.05K  /  26 Page

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    LE28F4001C LE28F4001CTS LE28F4001CTS-12

SANYO[Sanyo Semicon Device]
Part No. LE28F4001C LE28F4001CTS LE28F4001CTS-12
OCR Text ...on storage applications. Figure 1 shows the pin assignments for the 32 lead Plastic TSOP packages. Figure 2 shows the functional block diagram of the LE28F4001C. Pin description and operation modes can be found in Tables 1 through 3. Dev...
Description 4m-bit (512k 8) Flash EEPROM
4m-bit (512k 】 8) Flash EEPROM
4m-bit (512k 8) Flash EEPROM
4m-bit (512k × 8) Flash EEPROM

File Size 167.02K  /  15 Page

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    M30620ECFP M30620ECFS M30620ECGP M30620SFP M30620SGP M30622M4 M30622M4-105FP M30622M4-115FP M30622M8-196GP M30622M8-567G

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M30620ECFP M30620ECFS M30620ECGP M30620SFP M30620SGP M30622M4 M30622M4-105FP M30622M4-115FP M30622M8-196GP M30622M8-567GP M30622M8-703FP M30622M8-762FP M30622M8A-4C8FP M30622MA-173FP M30622MA-179GP M30622MA-1E6FP M30622MA-569FP M30622MA-721FP M30622MA-726FP M30622MA-812FP M30622MA-A01FP M30622MA-A22FP M30622MA-A26FP M30622MA-A29FP M30622MA-D00GP M30622MB-178GP M30622MC-005GP M30622MC-166FP M30622MC-528FP M30622MC-541FP M30622MC-577FP M30622MC-737FP M30622MC-740FP M30622MC-746FP M30622MC-764FP M30622SFP M30622SGP M30624FGFP M30624FGGP M30624FGLFP M30624FGLGP M30624MG-247FP M30624MG-327FP M30624MGA-322FP M30624MGA-333FP M30624MGA-337FP M30624MGA-379FP M30624MGM-437FP M30624MGM-443FP M30624MGA- M30624FGLG M30622 M30620M8-359FP M30620M8-A69GP M30620MC-2F2FP M30620MC-335GP M30620MC-336GP M30620MC-345GP M30620MC-388FP M30620MC-405FP M30620MC-A18FP M30620MC-D37FP M30620MC-E80GP
OCR Text .................. ROM (See Figure 1.1.4. ROM Expansion) RAM 3K to 20K bytes * Shortest instruction execution time ...... 62.5ns (f(XIN)=16MHZ,...2 to 5.5V (f(XIN)=16MHZ, without software wait) : Mask ROM, flash memory 5V version 4.5 to 5.5V (f(X...
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

File Size 3,539.20K  /  276 Page

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