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  063 031 Datasheet PDF File

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ene...031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.02K  /  2 Page

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetiti...031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (...
Description 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm

File Size 64.96K  /  4 Page

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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ene...031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (...
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 34.16K  /  2 Page

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    APT5014B2VR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5014B2VR
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetiti...031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.4...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm

File Size 61.78K  /  4 Page

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    APT5014BFLL APT5014SFLL

Advanced Power Technology
Part No. APT5014BFLL APT5014SFLL
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ene...031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.46K  /  2 Page

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    APT5014 APT5014BLL APT5014SLL

Advanced Power Technology
Part No. APT5014 APT5014BLL APT5014SLL
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ene...031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.46K  /  2 Page

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    APT5015BLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5015BLC
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ene...031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.4...
Description POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 28.40K  /  2 Page

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetiti...031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.4...
Description POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.16K  /  4 Page

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    APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016

ADPOW[Advanced Power Technology]
Part No. APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ene...031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.47K  /  2 Page

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    APT5016 APT5016BFLL APT5016SFLL

ADPOW[Advanced Power Technology]
Part No. APT5016 APT5016BFLL APT5016SFLL
OCR Text ...ature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ene...031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.90K  /  2 Page

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