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  0.6 1.0 1.4 1.8ghz Datasheet PDF File

For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 1094    Search Time::5.079ms    
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    BFR193W Q62702-F1510

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SIEMENS[Siemens Semiconductor Group]
Part No. BFR193W Q62702-F1510
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...6 8 0.74 0.28 1.8 - GHz pF 1 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base c...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)

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    BFR193 Q62702-F1218

SIEMENS[Siemens Semiconductor Group]
Part No. BFR193 Q62702-F1218
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...6 8 0.68 0.24 1.8 - GHz pF 1 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base c...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 57.05K  /  7 Page

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    MAX3264 MAX3264CUE MAX3265 MAX3265CUB MAX3265CUE MAX3265EUE MAX3268C_D MAX3268CUB MAX3269CUB MAX3264C/D MAX3265C/D MAX32

MAXIM - Dallas Semiconductor
Maxim Integrated Products
Part No. MAX3264 MAX3264CUE MAX3265 MAX3265CUB MAX3265CUE MAX3265EUE MAX3268C_D MAX3268CUB MAX3269CUB MAX3264C/D MAX3265C/D MAX3268C/D MAX3269C/D
OCR Text ...C CAZ1 CAZ2 VCC CIN 0.01F IN+ 100 IN- MAX3264CUE MAX3265CUE MAX3265EUE OUT+ RTERM 0.01F OUT- 0.01F RL 100 MAX...6.0V Voltage at IN+, IN- ..........................(VCC - 2.4V) to (VCC + 0.5V) Voltage at SQUELCH, ...
Description 3.0V to 5.5V / 1.25Gbps/2.5Gbps Limiting Amplifiers
3.0V to 5.5V, 1.25Gbps/2.5Gbps Limiting Amplifiers

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    MC100LVEL51 MC100LVEL51D ON0530 MC100LVEL51DR2

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC100LVEL51 MC100LVEL51D ON0530 MC100LVEL51DR2
OCR Text ...nput LOW Current CLK Other -600 0.5 -3.0 Min Typ 30 -3.3 Max 35 -3.8 150 -600 0.5 -3.0 Min 0C Typ 30 -3.3 Max 35 -3.8 150 -600 0.5 -3.0 Min ...6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN...
Description From old datasheet system
Differential Clock D Flip-Flop

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    MC10E137 MC10E137FN MC100E137 MC100E137FN ON0619

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC10E137 MC10E137FN MC100E137 MC100E137FN ON0619
OCR Text ... Reset bypassed to ground via a 0.01F capacitor. VBB can only source/sink VBB Switching Refernce Output 0.5mA, therefore it should be used a...6 VCCO 7 Q0 8 Q0 9 Q1 10 Q1 11 VCCO Q7 24 Q6 23 Q6 22 VCCO 21 Q5 20 Q5 19 18 17 16 15 14 13 12 Q4 Q4...
Description From old datasheet system
8-BIT RIPPLE COUNTER

File Size 117.59K  /  5 Page

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    SY10E137 SY10E137JC SY10E137JCTR SY100E137JCTR SY100E137JC SY100E137

Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
Part No. SY10E137 SY10E137JC SY10E137JCTR SY100E137JCTR SY100E137JC SY100E137
OCR Text ...ut and bypassed to ground via a 0.01F capacitor. VBB can only source/sink 0.5mA; therefore, it should be used as a switching reference for t...6 7 8 9 10 11 Q4 Q4 VCC Q3 Q3 Q2 Q2 PLCC TOP VIEW J28-1 16 15 14 13 12 Q0 Q1 Q0 VC...
Description DIODE ZENER SINGLE 200mW 12.05Vz 5mA-Izt 0.0539 0.1uA-Ir 8 SOD-323 3K/REEL 10E SERIES, ASYN POSITIVE EDGE TRIGGERED 8-BIT UP BINARY COUNTER, PQCC28
DIODE ZENER SINGLE 150mW 12Vz 5mA-Izt 0.05 0.1uA-Ir 8 SOD-523 3K/REEL
8-BIT RIPPLE COUNTER

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    BFG135A Q62702-F1322

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SIEMENS[Siemens Semiconductor Group]
Part No. BFG135A Q62702-F1322
OCR Text ...0 A 1 80 250 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff curr...6 1.3 0.8 7.5 - GHz pF 1.8 dB 2 3.7 - IC = 100 mA, VCE = 8 V, f = 200 MHz Collector-base capa...
Description NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)
From old datasheet system

File Size 49.77K  /  6 Page

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    BFG193 Q62702-F1291

SIEMENS[Siemens Semiconductor Group]
http://
Part No. BFG193 Q62702-F1291
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...6 8 0.6 0.4 2 - GHz pF 0.9 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base cap...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

File Size 48.58K  /  6 Page

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    BFG235 Q62702-F1432

SIEMENS[Siemens Semiconductor Group]
Part No. BFG235 Q62702-F1432
OCR Text ...0 A 2 50 250 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff curr...6 1.5 15 - GHz pF 3.6 dB 2.7 - IC = 200 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance...
Description From old datasheet system
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

File Size 48.86K  /  6 Page

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    CLY5 Q62702-L90

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. CLY5 Q62702-L90
OCR Text ...ration current VDS = 3 V VGS = 0 V CLY 5 typ 800 10 5 -2.8 11.0 max 1200 100 20 -1.8 Unit mA A A V dB ______________________________...6 7[V] 8 Drain-Source Voltage D 80 [%] 70 60 50 40 30 20 10 0 Gain 16 [dB] 14 12 10 8 6 4 2 ...
Description GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system

File Size 86.49K  /  8 Page

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For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 1094    Search Time::5.079ms    
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