0.40-2.60v pdf Datasheet P2 Full Text Search --- IC-ON-LINE


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0.40-2.60v Datasheet PDF File

For 0.40-2.60v Found Datasheets File :: 9298 Search Time::1.641ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SB942 2SD1267A 2SD1267
OCR Text	...2SD1267 and 2SD1267A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q 7.50.2 Solder Dip 4.0 14.00.5 s Absolute Maximum Ratings Parameter Collect...
Description	Silicon PNP epitaxial planar type(For low-frequency power amplification)
File Size	45.73K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB949 2SB949A 2SD1275A 2SD1275
OCR Text	0.70.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm ...40.1 1.30.2 Solder Dip 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 emitter voltage 2SB949A ...
Description	Silicon PNP epitaxial planar type Darlington
File Size	61.28K / 2 Page	View it Online	Download Datasheet

				PANASONIC CORP PANASONIC[Panasonic Semiconductor]
Part No.	2SB950 2SB950A 2SD1276A 2SD1276
OCR Text	...tary to 2SD1276 and 2SD1276A 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 7.50.2 s Features q q q High foward current ...40 2 150 -55 to +150 Unit V 16.70.3 3.10.1 14.00.5 s Absolute Maximum Ratings Parameter...
Description	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
File Size	60.93K / 2 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SB951 2SB951A 2SD1277A 2SD1277
OCR Text	0.70.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm 7.50.2 ...40.1 1.30.2 14.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base v...
Description	Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
File Size	69.42K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB954 2SB954A
OCR Text	... s Features q q q Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings...
Description	Silicon PNP epitaxial planar type(For power amplification)
File Size	45.35K / 2 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SD1149
OCR Text	0.2 2.8 -0.3 s Features q q q q 0.650.15 1.5 -0.05 +0.25 0.650.15 +0.2 1.1 -0.1 Parameter Collector to base voltage...40.2 0.8 0.16 -0.06 +0.1 High foward current transfer ratio hFE. Low collector to emitte...
Description	Silicon NPN epitaxial planer type(For low-frequency amplification)
File Size	38.00K / 2 Page	View it Online	Download Datasheet

				HSMC CORP. HI-SINCERITY MICROELECTRONICS, CORP. HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HTIP42C HTIP42
OCR Text	...V V Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=-5V IC=-6A, IB=-600mA IC=-6A, VCE=-4V IC=-0.3A, VCE=-4V IC=-3A, VCE=...40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 16.25 DIM I K M N O P Inches Min. Max. 0.1508 0.0295 ...
Description	PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管
File Size	27.00K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistan...40 Units C/W www.irf.com 1 02/14/02 IRF1010ES/IRF1010EL Electrical Characteristics @ ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistan...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , J...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...jmax G VDSS = 75V RDS(on) = 0.0078 S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advance...40 Units C/W **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footpri...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

For 0.40-2.60v Found Datasheets File :: 9298 Search Time::1.641ms
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