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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
IRFN340SMD
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| OCR Text |
0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
BVDSS ID(cont) RDS(on)
FEATURES
400V 10A W 0.55W
0 .7 6 (... |
| Description |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
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| File Size |
23.56K /
2 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRFN250
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| OCR Text |
0.100 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also fe... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) 功率MOSFET N沟道BVdss \u003d 200V的电压，的Rds（on）\u003d 0.100ohm，身份证\u003d 27.4A
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| File Size |
180.78K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFN240
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| OCR Text |
0.18 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also fea... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
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| File Size |
181.17K /
6 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IRFP260
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| OCR Text |
...mperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 100 TJ = 25C TJ = 125C 25 250 V V nA A A
Applications * Sw... |
| Description |
Standard Power MOSFET - N-Channel Enhancement Mode
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| File Size |
35.18K /
2 Page |
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it Online |
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http://
IRF[International Rectifier]
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| Part No. |
IRFN054
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| OCR Text |
0.020 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also fea... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)
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| File Size |
180.33K /
6 Page |
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it Online |
Download Datasheet |
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TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
http://
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| Part No. |
IRFN054SMD
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| OCR Text |
0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
... |
| Description |
N-CHANNEL POWER MOSFET 45 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
23.28K /
2 Page |
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it Online |
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http://
IRF[International Rectifier]
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| Part No. |
IRFN044
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| OCR Text |
0.040 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also fea... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)
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| File Size |
175.47K /
6 Page |
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it Online |
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http://
SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
IRFN044SMD
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| OCR Text |
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax.
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
22.17K /
2 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFMJ044
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| OCR Text |
...FET TECHNOLOGY
(R)
RDS(on)
0.04
ID
35A*
HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined... |
| Description |
POWER MOSFET SURFACE MOUNT (D3 PAK)
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| File Size |
236.74K /
7 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IRFP264
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| OCR Text |
0.075
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited b... |
| Description |
Standard Power MOSFET - N-Channel Enhancement Mode
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| File Size |
46.15K /
2 Page |
View
it Online |
Download Datasheet |
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