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0-400v Datasheet PDF File

For 0-400v Found Datasheets File :: 11890 Search Time::1.438ms
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				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP05N50S-HF
OCR Text	...ject to change without notice 5.0 18 73.5 3 2.8 45 -55 to 150 1 ap05n50s-hf + 20 rating 500 halogen-free product 200906221 maximum thermal r...400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total g...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	92.00K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110L
OCR Text	...ht Min. Max. Units -0.5 VS + 20 -- 400 V S - 0.5 VB + 0.5 -0.5 20 -0.5 VCC + 0.5 -0.5 VSS + 20 VCC - 20 VCC + 0.5 VSS - 0.5 VDD ...400V VS = 400V CL = 1000pf CL = 1000pf ns \|Hton-Lton\|/\|Htoff-Ltoff\| Typical Connection up ...
Description	HIGH AND LOW SIDE DRIVER
File Size	131.31K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...umber BVDSS RDS(on) IRF360 400V 0.20 ID 25A IRF360 400V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...l VDSS 500V RDS(on) max 0.85 ID 8.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanc...400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...l VDSS 500V Rds(on) max 0.85 ID 8.0A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C ID...400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise s...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP05N50I-HF14
OCR Text	...mal resistance, junction-case 4.0 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change wit...400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total g...
Description	Fast Switching Characteristic
File Size	57.03K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP05N50H-HF14
OCR Text	...ting 500 halogen-free product 5.0 18 73.5 3 2.8 45 0.59 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 4 g d s the ap05...400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total g...
Description	Fast Switching Characteristic N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	56.01K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP05N50EI-HF AP05N50EI-HF14
OCR Text	...recovery time 3 i s =2a, v gs =0 v , - 250 - ns q rr reverse recovery charge di/dt=100a/s - 1.75 - uc notes: 1.pulse width limited by max. ...400v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristic
File Size	56.68K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOWF7S60 AOW7S60
OCR Text	...00v i dm 33a r ds(on),max 0.6 w q g,typ 8.2nc e oss @ 400v 1.9 m j 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs...
Description	600V 7A a MOS TM Power Transistor
File Size	268.31K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOWF12N50
OCR Text	...a r ds(on) (at v gs =10v) < 0.52 ? 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/...400v, i d =12a gate source charge gate drain charge v ds =5v i d =250 a v ds =400v, t j =125c ze...
Description	12A N-Channel MOSFET
File Size	299.19K / 6 Page	View it Online	Download Datasheet

For 0-400v Found Datasheets File :: 11890 Search Time::1.438ms
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