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SamHop Microelectronics...
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| Part No. |
STB1082
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| OCR Text |
...rn-off delaytime v ds =50v,i d =19a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =19a v ds =10v , i d =19a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transc... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
107.15K /
8 Page |
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Alpha & Omega Semicondu...
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| Part No. |
AO4268
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| OCR Text |
19a r ds(on) (at v gs =10v) < 4.8m? r ds(on) (at v gs =4.5v) < 6.5m? applications 100% uis tested 100% rg tested ? synchronous rectification for ac-dc quick char ger ao4268 so-8 tape & reel 3000 60v n-channel alphasgt tm ord... |
| Description |
60V N-Channel AlphaSGT
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| File Size |
375.75K /
5 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semicondu...
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| Part No. |
AO4202L
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| OCR Text |
... =10v, v ds =5v v gs =10v, i d =19a reverse transfer capacitance i f =19a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions... |
| Description |
30V N-Channel MOSFET
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| File Size |
243.01K /
6 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP8600MT
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| OCR Text |
...on-resistance 2 v gs =10v, i d =19a - - 3.9 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =19a - 50 - s i dss drain-source leakage current v ds =64v, v gs =0v - - 25 ua i gss... |
| Description |
Ultra Low On-resistance
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| File Size |
69.53K /
6 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP8600MT-L
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| OCR Text |
...on-resistance 2 v gs =10v, i d =19a - - 3.9 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =19a - 50 - s i dss drain-source leakage current v ds =64v, v gs =0v - - 25 ua i gss... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
76.08K /
6 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BTS949
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| OCR Text |
...V t d = 400 ms, RI = 2 , ID=0,5*19A t d = 400 ms, RI = 2 , ID= 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1
VLD
110 92 E 40/150/56
Thermal resistance junction - case: junction - ambient: SMD version, devi... |
| Description |
Smart Low Side Switches - 60V, 18mΩ, 9,5A TO 220
Smart Lowside Power Switch
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| File Size |
180.06K /
11 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHYS67130CM IRHYS63130CM
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| OCR Text |
...25C, ID = 1.0mA VGS = 12V, ID = 19A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 19A A VDS = 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 20A VDS = 50V VDD = 50V, ID = 20A VGS =12V, RG = 7.5
IGSS IGSS Qg Q g... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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| File Size |
180.77K /
8 Page |
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it Online |
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