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  vds-55v Datasheet PDF File

For vds-55v Found Datasheets File :: 634    Search Time::5.219ms    
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    IRF5N3205

IRF[International Rectifier]
Part No. IRF5N3205
OCR Text ...ID = 1.0mA VGS = 10V, ID = 52A VDS = VGS, ID = 250A VDS =15V, IDS = 52A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS =-20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 27.5V, ID = 55A, VGS = 10V, RG = 2.5 IGSS IGSS Qg Q gs Q gd...
Description 55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)
SURFACE MOUNT (SMD-1) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.008ohm/ Id=55A*)

File Size 116.76K  /  7 Page

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    IRF5Y3205CM

IRF[International Rectifier]
Part No. IRF5Y3205CM
OCR Text ...ID = 1.0mA VGS = 10V, ID = 18A VDS = VGS, ID = 250A VDS = 15V, IDS = 18A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 44V VDD = 28V, ID = 18A, VGS =10V, RG = 2.5 IGSS IGSS Qg Q gs Q gd t...
Description 55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*)

File Size 101.36K  /  7 Page

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    IRFI3205 IRFI3205PBF

IRF[International Rectifier]
Part No. IRFI3205 IRFI3205PBF
OCR Text ...008 VGS = 10V, ID = 34A 4.0 V VDS = VGS, I D = 250A --- S VDS = 25V, ID = 59A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 170 ID = 59A 32 nC VDS = 44V 74 VGS = 10V, See Fig. 6 and 13 --- ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=64A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.008ohm/ Id=64A)

File Size 103.68K  /  8 Page

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    IRLIZ44N

IRF[International Rectifier]
Part No. IRLIZ44N
OCR Text ...035 VGS = 4.0V, ID = 14A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 25A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, T J = 150C 100 VGS = 16V nA -100 VGS = -16V 48 ID = 25A 8.6 nC VDS = 44V 25 VGS = 5.0V, See Fig. 6 and 13 --- ...
Description HEXFET? Power MOSFET

File Size 101.61K  /  8 Page

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    LTC3808 LTC3808EDE LTC3808EGN

Linear Technology
Part No. LTC3808 LTC3808EDE LTC3808EGN
OCR Text ...t mode architecture with MOSFET VDS sensing eliminates the need for a current sense resistor and improves efficiency. Burst Mode operation p...55V ELECTRICAL CHARACTERISTICS CONDITIONS MIN 0.325 TYP 20 0.4 40 40 50 40 MAX 0....
Description No RSENSE, Low EMI, Synchronous DC/DC Controller with Output Tracking

File Size 316.32K  /  28 Page

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    linear
Part No. LTC3809
OCR Text ...t mode architecture with MOSFET VDS sensing eliminates the need for a current sense resistor and improves efficiency. For noise sensitive ap...55V ELECTRICAL CHARACTERISTICS CONDITIONS MIN 0.325 TYP 20 0.4 40 40 50 40 MAX 0....
Description No RSENSETM, Low EMI, Synchronous DC/DC Controller

File Size 231.05K  /  24 Page

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    MSK3018

ETC
Part No. MSK3018
OCR Text ...l Time 1 1 1 1 1 1 1 1 1 ID=30A VDS=44V VGS=10V VDD=28V ID=30A RG=2.5 RD=0.93 VGS=0V VDS=25V f=1MHz ID=-10A VDS=-44V VGS=-10V VDD=-28V ID=-1...55V VGS=0V (Q2,Q4,Q6) VDS=-55V VGS=0V (Q1,Q3,Q5) VGS=20V VDS=0 (All Transistors) VDS=VGS ID=250A (Q2...
Description THREE PHASE BRIDGE MOSFET POWER MODULE

File Size 314.94K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. HUF75332S3S HUF75332P3 HUF75332G3 FN4489
OCR Text ...ID = 250A, VGS = 0V (Figure 11) VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC 55 - - 1 250 100 V A A nA Gate to Source ...55V 1 1 10 1ms STARTING TJ = 150oC 10ms 100 200 10 0.001 0.01 0.1 1 tAV, TIME I...
Description 60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
From old datasheet system

File Size 210.15K  /  18 Page

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    HUF75333S3S HUF75333P3 HUF75333G3 FN4362

INTERSIL[Intersil Corporation]
Part No. HUF75333S3S HUF75333P3 HUF75333G3 FN4362
OCR Text ...ID = 250A, VGS = 0V (Figure 11) VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC 55 - - 1 250 100 V A A nA Gate to Source ...55V 1 1 10 1ms 10ms STARTING TJ = 150oC 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) ...
Description From old datasheet system
66A/ 55V/ 0.016 Ohm. N-Channel UltraFET Power MOSFETs
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

File Size 107.91K  /  9 Page

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    INTERSIL[Intersil Corporation]
Part No. HUF75337S3S HUF75337P3 HUF75337G3 FN4369
OCR Text ...ID = 250A, VGS = 0V (Figure 11) VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC 55 - - 1 250 100 V A A nA Gate to Source ...55V 1 1 10 1ms 10ms STARTING TJ = 150oC 100 200 10 0.001 0.01 0.1 1 10 ...
Description 75A/ 55V/ 0.014 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N沟道UltraFET功率MOS场效应管)

File Size 105.94K  /  9 Page

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For vds-55v Found Datasheets File :: 634    Search Time::5.219ms    
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