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u-mos silicon Datasheet PDF File

For u-mos silicon Found Datasheets File :: 3471 Search Time::1.453ms
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				SUTEX[Supertex, Inc]
Part No.	TP5335 TP5335K1 TP5335NW
OCR Text	...0mA VGS = 0V, ISD = -200mA D.U.T. OUTPUT RL VDD 11/12/01
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
File Size	429.61K / 2 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC6001 TPC6.01
OCR Text	u-mosII) TPC6001 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: \|Yfs\| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS ...
Description	Notebook PC Applications Portable Equipment Applications
File Size	197.44K / 7 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TPC6002 TPC6.02
OCR Text	u-mosII) TPC6002 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 25 m (typ.) High forward transfer admittance: \|Yfs\| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS ...
Description	TOSHIBA Field Effect Transistor silicon N Channel MOS Type (u-mosII) Field Effect Transistor silicon N Channel MOS Type (u-mosII) Notebook PC Applications Portable Equipment Applications
File Size	151.80K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC6003
OCR Text	u-mosIII) TPC6003 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: \|Yfs\| = 7 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS ...
Description	Field Effect Transistor silicon N Channel MOS Type (u-mosIII) Notebook PC Applications Portable Equipment Applications TOSHIBA Field Effect Transistor silicon N Channel MOS Type (u-mosIII)
File Size	153.31K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC6005
OCR Text	u-mosIII) TPC6005 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 21 m (typ.) High forward transfer admittance: \|Yfs\| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS...
Description	Field Effect Transistor silicon N Channel MOS Type (u-mosIII) Notebook PC Applications Portable Equipment Applications TOSHIBA Field Effect Transistor silicon N Channel MOS Type (u-mosIII)
File Size	176.55K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC6101
OCR Text	u-mosII) TPC6101 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 48 m (typ.) High forward transfer admittance: \|Yfs\| = 8.2 S (typ.) Low leakage current: IDSS = -10 A (max) (VD...
Description	TOSHIBA Field Effect Transistor silicon P Channel MOS Type (u-mosII)
File Size	160.64K / 7 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TPCF8102
OCR Text	u-mos III) TPCF8102 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 24 m (typ.) High forward transfer admittance: \|Yfs\| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (...
Description	Field Effect Transistor silicon P Channel MOS Type (u-mos III)
File Size	220.83K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPCS8204
OCR Text	u-mosIII) TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 13 m (typ.) High forward tr...
Description	TOSHIBA Field Effect Transistor silicon N Channel MOS Type (u-mosIII)
File Size	302.12K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPCS8205 TPC8205
OCR Text	u-mos II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 m (typ.) High forward transfer admit...
Description	Field Effect Transistor silicon N Channel MOS Type (u-mos II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs TOSHIBA Field Effect Transistor silicon N Channel MOS Type (u-mos II)
File Size	288.86K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPCS8209
OCR Text	u-mosIII) TPCS8209 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transf...
Description	TOSHIBA Field Effect Transistor silicon N Channel MOS Type (u-mosIII) High performance, Low Cost 20 pin OTP
File Size	360.35K / 7 Page	View it Online	Download Datasheet

For u-mos silicon Found Datasheets File :: 3471 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |