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PFRA185 B3222BA1 SI2328DS SE20AFG MM1671 M50930 U209B E001479
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  traverse Datasheet PDF File

For traverse Found Datasheets File :: 610    Search Time::1.172ms    
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    Sony
Part No. CXD3068Q
OCR Text ... Digital spindle servo * 16-bit traverse counter * Asymmetry correction circuit * CPU interface on serial bus * Error correction monitor signal, etc. output from a new CPU interface * Servo auto sequencer * Fine search performs track jumps ...
Description IC,CD-PLAYER PROCESSOR/CONTROLLER,CMOS,QFP,80PIN,PLASTIC

File Size 1,252.95K  /  135 Page

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    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
OCR Text ... off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete s...
Description 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    ON Semi
Part No. MJE13007 MJF13007 ON2709
OCR Text ... off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete s...
Description POWER TRANSISTOR 8.0 AMPERES 400 VOLTS
From old datasheet system

File Size 197.04K  /  8 Page

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    Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10
OCR Text ...boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, BVDSS. The switching SOA is applicable for both turn-on and turn-off of the devices...
Description MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system

File Size 236.13K  /  10 Page

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    ON Semi
Part No. MTU18N50E_D ON2666 ON2665
OCR Text ... off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete s...
Description From old datasheet system
TMOS POWER FET 18 AMPERES 500 VOLTS

File Size 157.41K  /  8 Page

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    sony
Part No. CXD3017Q
OCR Text ... Digital spindle servo * 16-bit traverse counter * Asymmetry compensation circuit * CPU interface on serial bus * Error correction monitor signal, etc. output from a new CPU interface * Servo auto sequencer * Digital audio interface outputs...
Description IC,CD-PLAYER PROCESSOR/CONTROLLER,CMOS,QFP,80PIN,PLASTIC

File Size 773.01K  /  117 Page

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    MMFT3055E_D ON2223 MMFT3055E-D

ON Semiconductor
Part No. MMFT3055E_D ON2223 MMFT3055E-D
OCR Text ...boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, BVDSS. The switching SOA is applicable for both turn-on and turn-off of the devices...
Description Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23

File Size 202.50K  /  10 Page

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    ON Semi
Part No. MMFT3055EL_D ON2224
OCR Text ...boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, BVDSS. The switching SOA is applicable for both turn-on and turn-off of the devices...
Description N-hannel Enhancement-ode Logic Level SOT24
From old datasheet system

File Size 201.65K  /  10 Page

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    MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D
OCR Text ... off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete s...
Description TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate

File Size 157.34K  /  8 Page

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    ON Semi
Part No. MTP50N06EL_D ON2615
OCR Text ... off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete s...
Description TMOS POWER FET 50 AMPERES 60 VOLTS
From old datasheet system

File Size 198.40K  /  8 Page

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