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  space-charge Datasheet PDF File

For space-charge Found Datasheets File :: 9674    Search Time::5.953ms    
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    FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755

INTERSIL[Intersil Corporation]
Part No. FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755
OCR Text ...ned for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness...Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system

File Size 73.87K  /  8 Page

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    FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4

INTERSIL[Intersil Corporation]
Part No. FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4
OCR Text ...ned for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture ...Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

File Size 51.24K  /  8 Page

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    Intersil
Part No. FSYE913A0R3 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3 FSYE23A0D1
OCR Text ...ned for commercial and military space applications. enhanced power mosfet immunity to single event effects (see), single event gate rupture ...charge q g(tot) v gs = 0v to 20v v dd = 100v, i d = 8a - - 57 nc gate charge at 12v q g(12) v gs ...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 58.46K  /  8 Page

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    Intersil
Part No. FSYE913A0R4 FSYE23A0R4 FSYE430D
OCR Text ...ned for commercial and military space applications. enhanced power mosfet immunity to single event effects (see), single event gate rupture ...charge q g(tot) v gs = 0v to 20v v dd = 250v, i d = 3a - - 51 nc gate charge at 12v q g(12) v gs ...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 58.75K  /  8 Page

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    FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 FSF254R4

Intersil Corporation
Part No. FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 FSF254R4
OCR Text ...ned for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture ...Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage...
Description 18A/ 250V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

File Size 44.62K  /  8 Page

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    PE9701 PE9701EK PE9701ES 9701-11 9701-00 9701-01

PEREGRINE[Peregrine Semiconductor Corp.]
Part No. PE9701 PE9701EK PE9701ES 9701-11 9701-00 9701-01
OCR Text ...mpared with existing commercial space PLLs. The PE9701 features a 10/11 dual modulus prescaler, counters, and a phase comparator as shown in...charge pump * Serial, parallel or hardwired programmable * Ultra-low phase noise * SEU < 10-...
Description 3000 MHz UltraCMOSInteger-N PLL Rad Hard for Space Applications
3000 MHz UltraCMOS Integer-N PLL Rad Hard for Space Applications
3000 MHz UltraCMOS⑩ Integer-N PLL Rad Hard for Space Applications

File Size 274.74K  /  13 Page

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For space-charge Found Datasheets File :: 9674    Search Time::5.953ms    
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