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silicon-rectifier Datasheet PDF File

For silicon-rectifier Found Datasheets File :: 7903 Search Time::1.719ms
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				IRF[International Rectifier]
Part No.	IRFU4104 IRFR4104
OCR Text	...extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching s...Rectifier. www.irf.com 1 7/17/03 IRFR/U4104 Electrical Characteristics @ TJ = 25C (unless...
Description	40V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=40V / Rds(on)=5.5mohm / Id=42A) Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A) 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	178.95K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFU4105Z IRFR4105Z
OCR Text	...extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching s...Rectifier. www.irf.com 1 8/25/03 IRFR/U4105Z Electrical Characteristics @ TJ = 25C (unles...
Description	55V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET（讥\u003d 55V的，的Rds（on）\u003d 24.5mohm，身份证\u003d 30A条） Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A) 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	203.46K / 11 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRFU420 IRFR420 FN2411
OCR Text	... are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guarantee...Rectifier G D MIN - TYP - MAX 2.5 8 UNITS A A S Source to Drain Diode Voltage (No...
Description	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs(2.5A, 500V, 3.000 Ω, N沟道功率MOS场效应管) 2.5A 500V 3.000 Ohm N-Channel Power MOSFETs From old datasheet system
File Size	54.58K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRLR_U2905 U2905 IRLR2905 IRLR/U2905 IRLR2905PBF IRLR2905TRL IRLR2905TRR IRLU2905 IRLU2905PBF
OCR Text	...west possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use i...
Description	HEXFET Power MOSFET HEXFET功率MOSFET HEXFET® Power MOSFET 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
File Size	133.52K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTSF1P02HD ON2655
OCR Text	...west possible on-resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the dr...Rectifier. Thermal Clad is a trademark of the Berquist Company. REV 1 Motorola TMOS (c) Motoro...
Description	SINGLE TMOS POWER MOSFET SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM From old datasheet system
File Size	342.01K / 12 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	TMBYV10-40 TMBYV10-40FILM 3487 TMBYV-10-40
OCR Text	silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. ABSOLUTE MAXIMUM RATINGS (limiting...
Description	From old datasheet system SMALL SIGNAL SCHOTTKY DIODES Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Orange; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes
File Size	81.53K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics ST Microelectronics
Part No.	TMBYV10-60 3485 TMBYV-10-60 TMBYV10-60FILM
OCR Text	silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. MELF (Glass) ABSOLUTE MAXIMUM...
Description	From old datasheet system SMALL SIGNAL SCHOTTKY DIODE SMALL SIGNAL SCHOTTKY DIODE
File Size	75.84K / 5 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	TRAC020LH TRAC020LHQ36
OCR Text	... processing problems to working silicon solutions - in minutes! The Totally Reconfigurable Analog Circuit is a highly flexible single chip s...RECTIFIER (code 111) Similar to the anti-log function except that one of the diodes is removed so th...
Description	TOTALLY RE-CONFIGURABLE ANALOG CIRCUIT - TRAC
File Size	222.17K / 15 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TVR4J TVR4N VR4N VR4J
OCR Text	Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55C) Reverse Recovery Time: trr = 20 s Plas...
Description	TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
File Size	115.25K / 3 Page	View it Online	Download Datasheet

				GOOD-ARK[GOOD-ARK Electronics]
Part No.	U05GU4B48
OCR Text	SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK Reverse Voltage - 400 Volts Forward Current - 0.5 Ampere Application: TELCOMMUNICATION APPLICATIONS Repetitive peak reverse voltage: VRRM=400Volts Average forward current: IO=0.5A (TA=47 ) ...
Description	SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK
File Size	88.72K / 3 Page	View it Online	Download Datasheet

For silicon-rectifier Found Datasheets File :: 7903 Search Time::1.719ms
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