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				EMC[ELAN Microelectronics Corp]
Part No.	HM91710A HM91710B HM91710AP
OCR Text	...OSCI OSCO OSC. DIVIDER ROW/COLUMN PROGRAMMING COUNTER ROW1 ROW2 ROW3 ROW4 ROW INTERFACE CKT. D/A CONVERTER INPUT INTERFACE CKT. TONE DIALING SIGNAL OPTION : a]:Flash time: Row3 NR NR R R b). HKS Row4 NR R NR...
Description	IC,TELEPHONE DIALER,TONE/PULSE,CMOS,DIP,16PIN,PLASTIC TONE/PULSE SWITCHABLE DIALER
File Size	128.41K / 19 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this ...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				NANYA TECHNOLOGY CORP
Part No.	NT5SV8M16FT-6KI
OCR Text	... select v dd power (+3.3v) ras row address strobe v ss ground cas column address strobe v ddq power for dqs (+3.3v) we write enable v ssq ground for dqs ba1, ba0 bank select nc no connection a0 - a11 address inputs ? ? input/output func...
Description	8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
File Size	747.36K / 65 Page	View it Online	Download Datasheet

				Nanya Techology
Part No.	NT5DS32M8BW
OCR Text	...are used to select the bank and row to be accessed. the address bits registered coincident with the read or write command are used to select the bank and the starting column location for the burst access. the ddr sdram provides for progr...
Description	(NT5DSxxMxBx) 256Mb DDR SDRAM
File Size	1,959.62K / 80 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx1...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

				Micron
Part No.	MT9M032C12STMUES MT9M032C12STCHES MT9M032C12STMUDES
OCR Text	...esetting and then read ing each row in turn. in the time interval between resetting a row and reading that row, the pixels in the row integrate incident light. the exposure is controlled by varying the time interval between reset and re...
Description	1/4.5-Inch 1.6Mp CMOS Digital Image Sensor
File Size	319.88K / 19 Page	View it Online	Download Datasheet


Part No.	MT41K256M4JP-125G
OCR Text	... 8 banks refresh count 8k 8k 8k row address 16k a[13:0] 16k a[13:0] 8k a[12:0] 1gb: x4, x8, x16 ddr3l sdram addendum description pdf: 09005aef833b7221 1gb_1_35v_ddr3l.pdf - rev. f 2/11 en 1 micron technology, inc. reserves the right to chan...
Description	256M X 4 DDR DRAM, PBGA78
File Size	446.14K / 21 Page	View it Online	Download Datasheet


Part No.	MD16R1624EG0-CM8
OCR Text	...nd data buses with independent row and column control yield over 95% bus efficiency. the rdram device multi-bank architecture supports up to four simultaneous transactions per device. features ? 2 independent rdram channels, 1 pass thro...
Description	32M X 32 RAMBUS MODULE, DMA232
File Size	254.42K / 16 Page	View it Online	Download Datasheet

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