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  rg-178 Datasheet PDF File

For rg-178 Found Datasheets File :: 958    Search Time::1.094ms    
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    SPD03N60S5 SPU03N60S5

INFINEON[Infineon Technologies AG]
Part No. SPD03N60S5 SPU03N60S5
OCR Text ... DD=350V, V GS=0/10V, ID=3.2A, RG=20 ns - 3.5 7 12.4 8 16 - nC V(plateau) VDD=350V, ID=3.2A V 1Repetitve avalanche ...178 0.757 0.682 0.202 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00005232 0.0002034 ...
Description Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 249.99K  /  10 Page

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    SPI15N60C3 SPA15N60C3 SPP15N60C3

INFINEON[Infineon Technologies AG]
Part No. SPI15N60C3 SPA15N60C3 SPP15N60C3
OCR Text ...on) Gate input resistance RG f=1MHz, open drain Page 2 2003-07-01 Final data Electrical Characteristics Parameter Transcon...178 0.072 Tj P tot (t) C th1 C th2 C th,n T am b SPP15N60C3, SPI15N60C3 SPA15N60C3 Symbol IS ...
Description Cool MOS?/a> Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 260.58K  /  13 Page

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    APT10M25SVR

ADPOW[Advanced Power Technology]
Part No. APT10M25SVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 4300 1600 650 150 28 75 13 22 40 10 5160 2240 975 225 42 115 26 44 60 20 ns...178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048)...
Description POWER MOS V 100V 75A 0.025 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

File Size 68.10K  /  4 Page

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    APT30M75BLL APT30M75SLL

Advanced Power Technology
Part No. APT30M75BLL APT30M75SLL
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 44 176 1.3 ...178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BS...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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    IRFPS35N50L

IRF[International Rectifier]
Part No. IRFPS35N50L
OCR Text ...SS/TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Sourc...178] 2.15 [.084] 1.45 [.058] 0.25 [.010] 13.90 [.547] 13.30 [.524] BA 2X R 3.00 [.118] 2.00 [.079] A...
Description 30V N-Channel PowerTrench MOSFET
HEXFETPower MOSFET
HEXFET Power MOSFET

File Size 151.24K  /  8 Page

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    NES1823P-100

NEC[NEC]
Part No. NES1823P-100
OCR Text ...1 Symbol VDS Gcomp Tch IDset Rg Test Condition MIN. TYP. 10.0 MAX. 10.0 3.0 +150 Unit V dB C A 6.0 10 8.0 12.5 N...178.2 165.7 161.8 156.5 149.7 145.0 142.0 135.7 134.8 125.7 119.7 119.2 109.0 106.7 94.9 88.7 72.9 ...
Description 100W L-BAND PUSH-PULL POWER GaAs MESFET

File Size 152.24K  /  20 Page

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    2SK2112 D11232EJ2V0DS00

NEC[NEC]
Part No. 2SK2112 D11232EJ2V0DS00
OCR Text ...5 V, ID = 0.5 A VGS(on) = 10 V, RG = 10 RL = 50 TEST CONDITIONS VDS = 100 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V,...178 59 16 2.9 1.7 60 15 1.2 0.8 1.5 MIN. TYP. MAX. 1.0 10 2.0 UNIT A A V S pF pF pF ns ns ns n...
Description N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor

File Size 56.23K  /  6 Page

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    FLU35ZMNBSP FLU35ZM

List of Unclassifed Manufacturers
ETC
Part No. FLU35ZMNBSP FLU35ZM
OCR Text ...25oC) Symbol VDS Tch Igsf Igsr Rg Condition Unit V o 10 145 19.4 -2.0 100 C mA mA ELECTRICAL CHARACTERISTICS (Case Temperat...178.09 0.92 175.59 0.92 168.62 0.89 159.87 0.90 150.98 0.91 143.89 0.93 137.22 0.93 133.89 S21 MAG A...
Description L-Band Medium & High Power GaAs FET
From old datasheet system

File Size 222.72K  /  8 Page

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    IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1N60ATRR

IRF[International Rectifier]
Part No. IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1N60ATRR
OCR Text ...VDD = 250V --- ID = 1.4A ns --- RG = 2.15 --- RD = 178,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Avalanche...
Description 600V Single N-Channel HEXFET Power MOSFET in a D-Pak package
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
SMPS MOSFET
Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)

File Size 178.28K  /  10 Page

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    STK800 K800

STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. STK800 K800
OCR Text ...ance Very low capacitances 100% Rg tested Fully incapsulated die In compliance with the 2002/95/EC european directive PolarPAK(R) ...178 0.185 0.147 0.41 4.37 4.50 3.58 0.016 0.172 0.177 0.141 0.20 3.64 0.76 0.25 4.10 0.9...
Description N-CHANNEL 30V - 0.006 Ohm - 20A
From old datasheet system
N-channel 30V - 0.006 - 20A - PolarPAK-R STripFET-TM Power MOSFET
N-channel 30V - 0.006з - 20A - PolarPAK-R STripFET-TM Power MOSFET
N-channel 30V - 0.006?/a> - 20A - PolarPAK-R STripFET-TM Power MOSFET

File Size 217.03K  /  12 Page

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For rg-178 Found Datasheets File :: 958    Search Time::1.094ms    
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