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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP27N60K
OCR Text	... VDD = 300V --- ID = 27A ns --- RG = 4.3 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VD...140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical T...
Description	Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rdson）典\u003d 180mohm，身份证\u003d 27A条） Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)
File Size	89.84K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLL014N IRLL014NTR
OCR Text	... VDD = 28V --- ID = 2.0A ns --- RG = 6.0 --- RD = 14, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain R...140 160 A V G S , G ate-to -So urce Voltag e (V) T J , J unc tion T em perature (C ) Fig...
Description	Advanced Process Technology HEXFET Power MOSFET
File Size	154.63K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHW7N60
OCR Text	... pF VDD = 300 V; ID = 6.2 A; RG = 9.1 ; RD = 47 Measured from drain lead 6 mm from package to centre of die Measured from source lead...140 0.001 1E-05 1E-03 t/s T 1E-01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C ...
Description	PowerMOS transistor
File Size	51.89K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	SI4435DY SI4435DYTR
OCR Text	...V 76 110 ID = -1.0A ns 130 200 RG = 6.0 90 140 R D = 15 2320 --- VGS = 0V 390 --- pF VDS = -15V 270 --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulse...
Description	-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=-30V Rds(on)=0.020ohm Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm SHROuD, PRIVACY; RoHS Compliant: Yes
File Size	81.44K / 8 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	SSM2019 SSM2019BN SSM2019BRN SSM2019BRNRL SSM2019BRW SSM2019BRWRL
OCR Text	...racy VO VOOS ISC 13.5 RG = 10 kW G-1 TA = 25C RG = 10 W, G = 1000 RG = 101 W, G = 100 RG = 1.1 kW, G = 10 RG = , G = 1 0....140 G = 1000 G = 100 G = 10 G=1 150 G = 1000 125 G = 10 100 +PSRR - dB 150 G = 1000 125 G = ...
Description	Self-Contained Audio Preamplifier
File Size	254.71K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT 5375 1040 185 145 34 76 12 15 28 4.6 6500 1460 280 220 41 120 24 30 42 10.0...140 120 100 80 60 NORMALIZED TO = 10V @ 0.5 I [Cont.] D TJ = +25C TJ = +125C VDS> ID (ON) x ...
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6y ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C 37 148 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 1...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5014B2VR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 5600 737 330 234 36 115 12 15 45 7 6720 1030 500 350 54 170 24 30 70 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
File Size	61.78K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 35 140 1.3 15 250 525 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 1.6 6.0 13 21 T...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5014LVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 5600 737 330 234 36 115 12 15 45 7 6720 1030 500 350 54 170 24 30 70 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay...
Description	POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.64K / 4 Page	View it Online	Download Datasheet

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