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For non-cycling Found Datasheets File :: 3679 Search Time::3.625ms
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				MCNIX[Macronix International]
Part No.	MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TMC-90 MX29F800TMI-12 MX29F800TMI-90 MX29F800TTC-12 MX29F800TTC-70 MX29F800TTC-90 MX29F800TTI-12 MX29F800TTI-90 MX29F800BTC-70 MX29F800BTC-90 29F800 MX29F800B MX29F800BMC-12 MX29F800BMC-70 MX29F800BMC-90 MX29F800BTA-12 MX29F800BTA-90 MX29F800BTC-12 MX29F800TTA-12 MX29F800TTA-90
OCR Text	...fective and reliable read/write non-volatile random access memory. The MX29F800T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to...cycling. The MX29F800T/B uses a 5.0V10% VCC supply to perform the High Reliability Erase and auto Pr...
Description	8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
File Size	691.27K / 42 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX29L1611G MX29L1611GPC-10 MX29L1611GPC-12 MX29L1611GPC-90 MX29L1611PC-10 MX29L1611PC-12 MX29L1611PC-90
OCR Text	...fective and reliable read/write non-volatile random access memory. The MX29L1611G is packaged in 42 pin PDIP. The standard MX29L1611G offers...cycling. The MX29L1611G uses a 11V Vpp supply to perform the Auto Erase and Auto Program algorithms....
Description	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
File Size	377.97K / 34 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX29L1611 MX29L1611MC-10 MX29L1611MC-12 MX29L1611MC-75 MX29L1611MC-90 MX29L1611TC-10 MX29L1611TC-12 MX29L1611TC-75 MX29L1611TC-90
OCR Text	...chieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V. P/N:PM0511 REV. 2.4, NOV. 06, 2001 1 MX29L1611 PIN CONFIGURATIONS 44 ...
Description	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
File Size	657.29K / 39 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX29LV160AT MX29LV160T MX29LV160AB MX29LV160ATTC-70 MX29LV160 MX29LV160BTC-90 MX29LV160ABTC-70 MX29LV160ABTC-70G MX29LV160ABTC-90 MX29LV160ABTC-90G MX29LV160TTC-90 MX29LV160BTC-70 MX29LV160ATTC-90 MX29LV160ATTC-90G MX29LV160BMC-90 MX29LV160TTC-70 MX29LV160TMC-90 MX29LV160ATXBC-70 MX29LV160ATXBC-70G MX29LV160ATXBC-90 MX29LV160ATXBC-90G MX29LV160ATXBI-70 MX29LV160ATXBI-70G MX29LV160ATXBI-90 MX29LV160ABTI-70 MX29LV160ABTI-70G MX29LV160ATTI-70 MX29LV160ATTI-70G MX29LV160ATTI-90 MX29LV160ATTI-90G MX29LV160ABTI-90 MX29LV160ABTI-90G MX29LV160TTI-70
OCR Text	...chieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. Part Name MX29LV160T/B MX29LV160AT/AB Difference 1) Without CFI compliant 2)CSP di...
Description	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
File Size	1,355.59K / 66 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PBYL2025B PBYL2020B
OCR Text	...Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL20 Tmb 120 C square wave; = 0.5; Tmb 131 C square wave; = 0.5; T...
Description	Rectifier diodes Schottky barrier(肖特基势垒整流二极管)
File Size	46.55K / 5 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PBYL2025 PBYL2020
OCR Text	...Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL20 Tmb 120 C square wave; = 0.5; Tmb 131 C square wave; = 0.5; T...
Description	Rectifier diodes Schottky barrier
File Size	43.58K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP3055L
OCR Text	...ting factor Gate-source voltage Non-repetitive gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tm...
Description	PowerMOS transistor Logic level FET
File Size	47.73K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHX3055L
OCR Text	...ting factor Gate-source voltage Non-repetitive gate source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Ths = 25 C; VGS = 10 V Ths = 100 C; VGS = 10 V Ths = 25 C Th...
Description	PowerMOS transistor Logic level FET 9.4 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	52.14K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BYV116 BYV116-20 BYV116-25 BYV116B BYV116B-20 BYV116B-25 BYV116SERIES BYV116BSERIES
OCR Text	... peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb 124 C square wave; = 0.5; Tmb 123 C square wave; = 0.5;...
Description	Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Color:Orange; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Color:Yellow; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes Very low drop voltage regulators with inhibit Rectifier diodes Schottky barrier
File Size	52.57K / 6 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
OCR Text	.... tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCStWCS(min), the cycle is an early write cycle and the data output will remain high impedance...
Description	8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
File Size	366.42K / 20 Page	View it Online	Download Datasheet

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