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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD750P100
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| OCR Text |
...aAs pseudomorphic High Electron mobility Transistor (PHEMT), featuring a 0.25 m by 750 m Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimiz... |
| Description |
0.5W PACKAGED POWER PHEMT
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| File Size |
179.87K /
3 Page |
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it Online |
Download Datasheet
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPDA200V
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epit... |
| Description |
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
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| File Size |
57.15K /
3 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP1500SOT89
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| OCR Text |
...As) pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate res... |
| Description |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
43.63K /
3 Page |
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it Online |
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Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP1500
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epi... |
| Description |
1W POWER PHEMT
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| File Size |
39.07K /
2 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP3000P100
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| OCR Text |
...As) pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate res... |
| Description |
PACKAGED 2W POWER PHEMT
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| File Size |
46.54K /
3 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP3000
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 3000 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epi... |
| Description |
2 W POWER PHEMT
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| File Size |
43.72K /
2 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP6872P100-3 LP6872P100 LP6872P100-1 LP6872P100-2
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 720 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epi... |
| Description |
Packaged 0.5W Power PHEMT
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| File Size |
22.33K /
2 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP6872
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 720 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epit... |
| Description |
0.5W POWER PHEMT
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| File Size |
37.34K /
2 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP750P100
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial st... |
| Description |
PACKAGED 0.5 WATT POWER PHEMT
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| File Size |
48.29K /
3 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP750
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 750 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epit... |
| Description |
0.5 W POWER PHEMT
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| File Size |
33.95K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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