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mhz-160 Datasheet PDF File

For mhz-160 Found Datasheets File :: 51725 Search Time::2.75ms
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				Advanced Power Technology
Part No.	MS1252
OCR Text	...M equipment operating up to 175 MHz. Ideally suited for marine radio applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Paramet...160 MHz f = 160 MHz f = 160 MHz f = 1 MHz PIN = 5 W PIN = 5 W PIN = 5 W VCE = 50 V VCE = 50 V ...
Description	RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS
File Size	80.71K / 3 Page	View it Online	Download Datasheet

				KOA Speer Electronics, Inc. KOA Speer Electronics, ...
Part No.	KQ0603TTER22 KQ0603TTER30 KQ0603TTER20 KQ0603TTER21 KQ0603TTER25 KQ0603TTER27 KQ0603TTE7N5 KQT0402TXX4N3 KQT0402TXX4N7 KQ0603TTE9N5 KQ0603TTE72N KQT0402TXX13N KQT0402TXX1N0 KQ0603TTE82N KQT0402TXX10N KQ0603TTER33 KQ0603TTER39 KQ0603TTER10 KQT0402TXX11N KQT0402TXX36N KQT0402TXX23N
OCR Text	...quency Minimum Maximum Maximum (MHz) (MHz) () (mA) 11000 0.045 1360 9600 0.070 0.068 0.120 0.066 1040 960 700 840 8000 7200 NEW ind...160 140 130 120 170 110 100 80 190 170 25 100 24 100 30 50 J: 5% K: 10% 50 For complete env...
Description	highQinductor
File Size	279.75K / 7 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MHVIC910HNR2
OCR Text	MHz - 960 MHz SiFET RF Integrated Power Amplifier The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale's n...160 170 180 190 200 IDQ, DRAIN QUIESCENT CURRENT (mA) VDD = 26 Vdc f = 880 MHz 0.5 W (RMS) Pout = 2....
Description	960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit Documentation 921 MHz-960 MHz SiFET RF Integrated Power Amplifier
File Size	320.24K / 12 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SA148307 2SA1483
OCR Text	... transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: Cob = 3.5 pF (typ.) Complementary to 2SC3803 Unit: mm Absolu...160 Collector current IC 100 50 30 10 -0.1 -0.3 -1 -3 -10 -30 -100 Col...
Description	High Frequency Amplifier Applications Video Amplifier Applications High Speed SwitcHing Applications
File Size	160.33K / 4 Page	View it Online	Download Datasheet

				Panasonic
Part No.	2SA879
OCR Text	...10 v, i e = 10 ma, f = 200 mhz 50 80 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 5 10 pf (common base, i...160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 collector power dissipation p c ( w ) ambi...
Description	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
File Size	88.41K / 4 Page	View it Online	Download Datasheet

				Infineon
Part No.	BSP613P
OCR Text	... = 0 v, v ds = -25 v, f = 1 mhz c iss 700 875 pf - c oss - 295 235 output capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz reverse ...160 t a 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 a -3.2 bsp613p i d power dissipation p tot = f ...
Description	Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
File Size	86.30K / 9 Page	View it Online	Download Datasheet

				Infineon
Part No.	BUZ22SMD BUZ22E3045A BUZ22E3046
OCR Text	... = 0 v, v ds = 25 v, f = 1 mhz c iss - 1400 1850 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 450 700 reve...160 buz 22 data sheet 4 05.99 electrical characteristics, at t j = 25?c, unless otherwise spec...
Description	Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL N-Channel SIPMOS Power Transistor
File Size	85.86K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
Part No.	FQD18N20V2TM FQD18N20V2TF
OCR Text	... = 25 v, v gs = 0 v, f = 1.0 mhz -- 830 1080 pf c oss output capacitance -- 200 260 pf ...160 v, v gs = 0 v, f = 1.0 mhz -- 70 -- pf c oss eff. effective output capacitance v ds = 0v to ...
Description	200V N-Channel Advanced QFET V2 series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 15 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	755.67K / 11 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	DTC115EM3T5G
OCR Text	...e (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 dtc114em3t5g series http://onsemi.com 6 typical electrical characteristics ? dtc124em3t5g v in , input voltage (volts) i c , collector cur...
Description	Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
File Size	80.13K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5080
OCR Text	...Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maxi...160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 ...
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	47.56K / 8 Page	View it Online	Download Datasheet

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