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  medium-gain Datasheet PDF File

For medium-gain Found Datasheets File :: 4841    Search Time::1.203ms    
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    FZT603

Zetex Semiconductors
Part No. FZT603
OCR Text MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching PARTMARKI...Gain normalised to 1 Amp 1.8 1.6 1.4 -55C +25C +100C +175C 2.5 -55C +25C +100C VCE=5V ...
Description NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

File Size 110.75K  /  3 Page

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    FZT605 FZT605TC

Diodes Incorporated
Diodes Inc.
ZETEX[Zetex Semiconductors]
Part No. FZT605 FZT605TC
OCR Text MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 4 - MARCH 2001 FEATURES * * Guaranteed hFE Specified up to 2A Fast Switching FZT605 FZT705 C F...Gain normalised to 1 Amp -55C +25C +100C +175C 2.5 2.0 1.5 1.0 0.5 -55C +25C +100C VCE=5...
Description SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

File Size 74.01K  /  2 Page

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    FZT689 FZT689B

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. FZT689 FZT689B
OCR Text MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Gain of 400 at IC=2 Amps and low saturation voltage * Extremely low equivalent on-resistance; RCE(sat) 92m at 3A APPLICATIONS * Darlington replacement * Flash gun converto...
Description SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

File Size 101.94K  /  2 Page

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    FZT696B FZT696BTA

List of Unclassifed Man...
Zetex Semiconductors
Diodes Incorporated
Part No. FZT696B FZT696BTA
OCR Text MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 FEBRUARY 1997 FEATURES * 250 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits PARTMARKING DETAIL FZT696B FZT69...
Description SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

File Size 97.42K  /  2 Page

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    FZT753

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. FZT753
OCR Text MEDIUM POWER TRANSISTOR ISSUE 4 FEBRUARY 1996 FEATURES * Low saturation voltage * Excellent hFE specified up to 2A FZT753 C E COMPLE...Gain 175 V+-=2V 1.0 I+/I*=10 125 h 75 0.6 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1...
Description SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

File Size 101.36K  /  2 Page

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    FZT790A

ZETEX[Zetex Semiconductors]
Part No. FZT790A
OCR Text MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125m at 2A * Gain of 200 at IC=1 Amp and very low saturation voltage APPLICATIONS * DC-DC converters, Siren drivers. COMPLEMENT...
Description Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-22
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

File Size 81.76K  /  2 Page

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    FZT795A

Zetex Semiconductors
Part No. FZT795A
OCR Text MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT694B PARTMARKING DETAIL FZT795A FZT795A...
Description PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

File Size 84.40K  /  2 Page

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    MMBTA28 MMBTA28-7

DIODES[Diodes Incorporated]
http://
Part No. MMBTA28 MMBTA28-7
OCR Text ...anar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Case: SOT-23, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Sold...
Description MicroPower Single-Supply Operational Amplifier MicroAmplifier(TM) Series 14-TSSOP
NPN SURFACE MOUNT DARLINGTON TRANSISTOR

File Size 59.35K  /  3 Page

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    NTE102A

NTE[NTE Electronics]
Part No. NTE102A
OCR Text Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package desig...Gain Common-Emitter Cutoff Frequency Collector-Emitter Saturation Voltage Noise Figure Symbol VCBO I...
Description Germanium Complementary Transistors Medium Power Amplifier

File Size 18.39K  /  2 Page

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    NTE102

NTE[NTE Electronics]
Part No. NTE102
OCR Text ...entary transistors designed for medium-speed saturated switching applications. Features: D Low Collector-Emitter Saturation Voltage: VCE(sat...Gain hFE VCE(sat) VBE VCE = 150mV, IC = 12mA VCE = 200mV, IC = 24mA Collector-Emitter Saturation Vol...
Description Germanium Complementary Transistors Power Output, Driver

File Size 23.79K  /  2 Page

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For medium-gain Found Datasheets File :: 4841    Search Time::1.203ms    
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