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For line-tm Found Datasheets File :: 7535    Search Time::1.969ms    
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    MTP10N10EL ON2537

MOTOROLA[Motorola, Inc]
Part No. MTP10N10EL ON2537
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description From old datasheet system
TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

File Size 221.09K  /  8 Page

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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text ...8 is the boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, V(BR)DSS. The switching SOA shown in Figure 8 is applicable for both turn-...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text ...9 is the boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, I DM and the breakdown voltage, BVDSS. The switching SOA shown in Figure 9 is applicable for both turn- o...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP15N06V ON2554

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06V ON2554
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
From old datasheet system

File Size 163.67K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

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    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text ... on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle mus...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

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For line-tm Found Datasheets File :: 7535    Search Time::1.969ms    
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