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  isoplus Datasheet PDF File

For isoplus Found Datasheets File :: 250    Search Time::1.094ms    
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    IXFR80N20Q

IXYS Corporation
Part No. IXFR80N20Q
OCR Text ...s(on) = 28m t rr 200 ns isoplus 247 tm e153432 ixys reserves the right to change limits, test conditions, and dimensions. preliminary data www.datasheet4u.net 2 - 2 ? 2000 ixys all rights reserved symbol test condition...
Description HiPerFET Power MOSFETs

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    IXFR80N20Q

IXYS, Corp.
IXYS Corporation
Part No. IXFR80N20Q
OCR Text ...s(on) = 28m t rr 200 ns isoplus 247 tm e153432 ixys reserves the right to change limits, test conditions, and dimensions. preliminary data 2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic valu...
Description TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 71A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 71A条(丁)|47VAR
HiPerFET Power MOSFETs isoplus247, Q-Class

File Size 34.26K  /  2 Page

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    FUO50-16N

IXYS Corporation
Part No. FUO50-16N
OCR Text isoplus i4-PACTM 1 3 4 5 VRRM = 1600 V ID(AV)M = 50 A IFSM = 200 A 1 2 5 Features Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM Ptot Symbol TC = 90C; sine 180 (per diode) TC = 90C TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Con...
Description
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    IXYS
Part No. CS30-14IO1 CS30-12IO1 CS30-16IO1
OCR Text ... 100 Limit TO-247 AD and isoplus 247 TM Dim. A B C D* E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0...
Description Phase Control Thyristors: PowerThyristor for Line Frequency Rectification

File Size 217.55K  /  3 Page

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    IXFR80N15Q

IXYS Corporation
Part No. IXFR80N15Q
OCR Text ...ms t = 1 min 2500 v~ weight 5 g isoplus 247 tm hiperfet tm power mosfets isoplus247 tm (electrically isolated backside) n-channel enhancement mode avalanche rated, low q g ,high dv/dt features silicon chip on direct-copper-bond substrate...
Description HiPerFET Power MOSFETs isoplus247
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电2.5mΩ的N沟道增强型HiPerFET功率MOSFET)

File Size 42.88K  /  2 Page

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    FMM50-025TF

IXYS Corporation
Part No. FMM50-025TF
OCR Text ...V 30A 50m 84ns T2 1 1 2 2 isoplus i4-PakTM Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions Maximum Ratings -55 ... +150 150 -55 ... +150 C C C ~V C C N/lb. 1 Isolated Tab 50/60HZ, RMS, t = 1min, leads-to-tab 1.6m...
Description Trench Gate HiperFET N-Channel Power MOSFET

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    IXFL36N110P

IXYS Corporation
Part No. IXFL36N110P
OCR Text ...= 1100V 26A 260m 300ns isoplus i5-PakTM (HV) Maximum Ratings 1100 1100 30 40 26 110 18 2 20 520 -55 ... +150 150 -55 ... +150 300 260 2500 3000 40..120/4.5..27 8 V V V V A A A J V/ns W C C C C C V~ V~ N/lb. g Features UL recogniz...
Description Polar Power MOSFET HiPerFET

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    IXFR12N100Q IXFR10N100Q

IXYS Corporation
Part No. IXFR12N100Q IXFR10N100Q
OCR Text ...0n100 1.2 ? ds98589-b (10/02) isoplus 247 tm features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low drain to tab capacitance(<50pf) low r ds (on) hdm...
Description HiPerFET Power MOSFETs isoplus247 Q CLASS
Discrete MOSFETs: HiPerFET Power MOSFETS

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    IXGR40N60C2 IXGR40N60C2D1

IXYS Corporation
IXYS, Corp.
Part No. IXGR40N60C2 IXGR40N60C2D1
OCR Text ... = 600 V 56 A 2.7 V 32 ns isoplus 247TM (IXGR) Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC =...
Description 56 A, 600 V, N-CHANNEL IGBT isoplus247, 3 PIN
HiPerFASTTM IGBT isoplus247TM C2-Class High Speed IGBTs

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    IXYS
Part No. DSS20-01AC
OCR Text ...r characteristic curves c a c a isoplus 220 tm isolated back surface* symbol conditions maximum ratings i frms 35 a i fav t c = 140 c; rectangular, d = 0.5 20 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 120 a e as i as = 8 a; l = 180...
Description Silicon Schottky Diodes

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For isoplus Found Datasheets File :: 250    Search Time::1.094ms    
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